期刊
PHYSICAL REVIEW LETTERS
卷 109, 期 9, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.109.095502
关键词
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资金
- U.S. DOE by LLNL [DE-AC52-07NA27344]
- NSF [0846835]
- LLNL Lawrence Scholar Program
- Div Of Civil, Mechanical, & Manufact Inn
- Directorate For Engineering [0846835] Funding Source: National Science Foundation
Under ion irradiation, all crystalline materials display some degree of dynamic annealing when defects experience evolution after the thermalization of collision cascades. The exact time scales of such defect relaxation processes are, however, unknown even for Si at room temperature. Here, we use a pulsed ion-beam method to measure a characteristic time constant of dominant dynamic annealing processes of about 6 ms in Si bombarded at room temperature with 500 keV Ar ions.
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