期刊
PHYSICAL REVIEW LETTERS
卷 107, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.107.047202
关键词
-
资金
- DFG Research units [GSC 266, P01, P07, FOR 1464, TP 1.2-A]
- BMBF
- Graduate School of Excellence MAINZ
We present a rational design scheme intended to provide stable high spin polarization at the interfaces of the magnetoresistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principles calculations verify that the interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediately between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.
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