Surface Band-Gap Narrowing in Quantized Electron Accumulation Layers

Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

Unification of the electrical behavior of defects, impurities, and surface states in semiconductors: Virtual gap states in CdO

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

Separation of bulk and surface electron transport in metamorphic InAs layers using quantitative mobility spectrum analysis

(2008) Y. Lin et al.   APPLIED PHYSICS LETTERS

Observation of quantized subband states and evidence for surface electron accumulation in CdO from angle-resolved photoemission spectroscopy

(2008) L. F. J. Piper et al.   PHYSICAL REVIEW B

Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

Nonparabolic coupled Poisson-Schrödinger solutions for quantized electron accumulation layers: Band bending, charge profile, and subbands at InN surfaces

(2008) P. D. C. King et al.   PHYSICAL REVIEW B

Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

(2008) P. D. C. King et al.   PHYSICAL REVIEW LETTERS