期刊
PHYSICAL REVIEW LETTERS
卷 102, 期 22, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevLett.102.226601
关键词
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资金
- JSPS
- MEXT
- SCOPE of the Ministry of Internal Affairs and Communications
- Laboratory for Nanoelectronics and Spintronics
- Research Institute of Electrical Communication, Tohoku University
We investigated the spin lifetime in gate-fitted InGaAs narrow wires from magnetotransport measurement. Applying positive gate bias voltage, the spin lifetimes in narrow wires became more than one order longer than those obtained from a Hall bar sample with two-dimensional electron gas. This enhancement of spin lifetime in gated wires is the first experimental evidence of dimensional confinement and resonant spin-orbit interaction effect controlled by gate bias voltage. Spin relaxation due to the cubic Dresselhaus term is negligible in the present InGaAs wires.
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