InSituReduction of Charge Noise inGaAs/AlxGa1−xAsSchottky-Gated Devices

标题
InSituReduction of Charge Noise inGaAs/AlxGa1−xAsSchottky-Gated Devices
作者
关键词
-
出版物
PHYSICAL REVIEW LETTERS
Volume 101, Issue 22, Pages -
出版商
American Physical Society (APS)
发表日期
2008-11-27
DOI
10.1103/physrevlett.101.226603

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