4.6 Article

Limiting factor of defect-engineered spin-filtering effect at room temperature

期刊

PHYSICAL REVIEW B
卷 89, 期 19, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.89.195412

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资金

  1. Linkoping University through the Professor Contracts
  2. Swedish Research council [621-2011-4254]
  3. Swedish Energy Agency
  4. Knut and Alice Wallenberg Foundation

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We identify hyperfine-induced electron and nuclear spin cross-relaxation as the dominant physical mechanism for the longitudinal electron spin relaxation time (T-1) of the spin-filtering Ga-i(2+) defects in GaNAs alloys. This conclusion is based on our experimental findings that T-1 is insensitive to temperature over 4-300 K, and its exact value is directly correlated with the hyperfine coupling strength of the defects that varies between different configurations of the Ga-i(2+) defects present in the alloys. These results thus provide a guideline for further improvements of the spin-filtering efficiency by optimizing growth and processing conditions to preferably incorporate the Ga-i(2+) defects with a weak hyperfine interaction and by searching for new spin-filtering defects with zero nuclear spin.

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