期刊
PHYSICAL REVIEW B
卷 90, 期 23, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.90.235143
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资金
- DOE at Brookhaven National Laboratory [DE-AC02-98CH10886]
- NSF [DMR 1305783]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1305783] Funding Source: National Science Foundation
Optical and Hall effect measurements have been performed on single crystals of Pb0.77Sn0.23Se, a IV-VI mixed chalcogenide. The temperature-dependent (10-300 K) reflectance was measured over 40-7000 cm(-1) (5-870 meV) with an extension to 15 500 cm(-1) (1.92 eV) at room temperature. The reflectance was fitted to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by a Drude-Lorentz fit. The carriers were p type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy optical spectra. It is found that the valence-conduction band transition energy as well as the free-carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density functional theory calculations for the electronic band structure are also presented.
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