4.6 Article

Response to noise of a vortex based spin transfer nano-oscillator

期刊

PHYSICAL REVIEW B
卷 89, 期 10, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.89.104404

关键词

-

资金

  1. ANR agency [SPINNOVA ANR-11-NANO-0016]
  2. EU FP7 grant (MOSAIC) [ICT-FP7-, 317950]
  3. CNES
  4. DGA

向作者/读者索取更多资源

We investigate experimentally and analytically the impact of thermal noise on the sustained gyrotropic mode of vortex magnetization in spin transfer nano-oscillators and its consequence on the linewidth broadening due to the different nonlinear contributions. Performing time domain measurements, we are able to extract separately the phase noise and the amplitude noise at room temperature for several values of dc current and perpendicular field. For a theoretical description, we extend the general model of nonlinear auto-oscillators to the case of vortex core dynamics and provide analytical expressions of the parameters describing the response to noise of the system. From the analysis of our experimental results, we demonstrate the major role of the amplitude-to-phase noise conversion on the linewidth broadening, and propose several solutions to increase even more the spectral coherence of vortex-based spin transfer nano-oscillators.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

Correction Physics, Applied

Ferrimagnetic compensation and its thickness dependence in TbFeCo alloy thin films (vol 120, 022405, 2022)

Mio Ishibashi, Kay Yakushiji, Masashi Kawaguchi, Arata Tsukamoto, Satoru Nakatsuji, Masamitsu Hayashi

APPLIED PHYSICS LETTERS (2022)

Article Physics, Applied

Ferrimagnetic compensation and its thickness dependence in TbFeCo alloy thin films

Mio Ishibashi, Kay Yakushiji, Masashi Kawaguchi, Arata Tsukamoto, Satoru Nakatsuji, Masamitsu Hayashi

Summary: The magnetic properties of rare earth-transition metal ferrimagnetic thin films are studied. It is found that the compensation of magnetic moments of rare earth and transition metal sublattices increases with decreasing film thickness. For thin TbFeCo films, Tb atoms do not contribute to the magnetization. The perpendicular magnetic anisotropy increases with a thin Co layer but drops to zero with a thin Tb layer. The Tb concentration at which magnetic compensation occurs decreases when the underlayer is changed from Pt to Ta.

APPLIED PHYSICS LETTERS (2022)

Article Multidisciplinary Sciences

Binding events through the mutual synchronization of spintronic nano-neurons

Miguel Romera, Philippe Talatchian, Sumito Tsunegi, Kay Yakushiji, Akio Fukushima, Hitoshi Kubota, Shinji Yuasa, Vincent Cros, Paolo Bortolotti, Maxence Ernoult, Damien Querlioz, Julie Grollier

Summary: The study demonstrates the potential of spin-torque nano-oscillators in neuromorphic computing by showing their ability to mutually synchronize and recognize temporal patterns, similar to neurons. This research is important for the construction of neural networks that perform brain-inspired computations by utilizing the non-linear dynamic properties of their components.

NATURE COMMUNICATIONS (2022)

Article Materials Science, Multidisciplinary

Enhancing the interfacial perpendicular magnetic anisotropy and tunnel magnetoresistance by inserting an ultrathin LiF layer at an Fe/MgO interface

Takayuki Nozaki, Tomohiro Nozaki, Tatsuya Yamamoto, Makoto Konoto, Atsushi Sugihara, Kay Yakushiji, Hitoshi Kubota, Akio Fukushima, Shinji Yuasa

Summary: Perpendicular magnetic anisotropy (PMA) is becoming increasingly important in spintronics research, especially for high-density magnetoresistive random access memories (MRAMs). This study proposes inserting an ultrathin LiF layer at the Fe/MgO interface and achieves a large intrinsic interface PMA energy. It is also found that a coherent spin-dependent tunneling process is maintained in the ultrathin LiF layer, leading to a large tunnel magnetoresistance (TMR) effect. Atomic-scale interface engineering using fluoride can further improve the PMA and TMR properties of spintronic devices.

NPG ASIA MATERIALS (2022)

Article Physics, Applied

Improvement in perpendicular magnetic anisotropy and its voltage control efficiency in CoFeB/MgO tunnel junctions with Ta/Mo layered adhesion structures

Tomohiro Ichinose, Tatsuya Yamamoto, Jun Uzuhashi, Takayuki Nozaki, Tadakatsu Ohkubo, Kay Yakushiji, Shingo Tamaru, Kazuhiro Hono, Shinji Yuasa

Summary: Thermally robust perpendicular magnetic anisotropy and voltage-controlled magnetic anisotropy effects were achieved in magnetic tunnel junctions with ultrathin CoFeB films by utilizing Ta/Mo layered adhesion structures.

JOURNAL OF APPLIED PHYSICS (2022)

Article Physics, Applied

Perpendicular magnetic anisotropy and its voltage control in MgO/CoFeB/Mo/CoFeB/MgO junctions

Tatsuya Yamamoto, Tomohiro Ichinose, Jun Uzuhashi, Takayuki Nozaki, Tadakatsu Ohkubo, Kay Yakushiji, Shingo Tamaru, Hitoshi Kubota, Akio Fukushima, Kazuhiro Hono, Shinji Yuasa

Summary: In this study, we investigate the perpendicular magnetic anisotropy (PMA) in MgO/CoFeB (CFB)/MgO junctions by introducing an angstrom-thick Mo spacer layer. It is found that perpendicularly magnetized CFB/Mo/CFB films can be obtained for a wide range of CFB thicknesses, achieving a large PMA energy density. The voltage-controlled magnetic anisotropy effect shows a sign inversion between the 'top free' and 'bottom free' magnetic tunnel junctions, indicating the importance of the flatness of the CFB/MgO interface for improving the efficiency of the effect.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2022)

Article Nanoscience & Nanotechnology

Precise interface engineering using a post-oxidized ultrathin MgAl layer for the voltage-controlled magnetic anisotropy effect

Takayuki Nozaki, Tomohiro Nozaki, Hiroshige Onoda, Hiroyasu Nakayama, Tomohiro Ichinose, Tatsuya Yamamoto, Makoto Konoto, Shinji Yuasa

Summary: This study investigates the effects of inserting a post-oxidized MgAl layer on the perpendicular magnetic anisotropy (PMA), tunnel magnetoresistance (TMR), and voltage-controlled magnetic anisotropy (VCMA) in epitaxial magnetic tunnel junctions (MTJs). The results show that the thickness of the MgAl layer plays a significant role in determining PMA and TMR values. A proper thickness of the MgAl layer can greatly enhance these properties. Furthermore, the VCMA coefficient increases as the MgAl layer thickness decreases, suggesting that a weakly oxidized interface provides a stronger VCMA effect.

APL MATERIALS (2022)

Article Physics, Applied

Voltage-controlled magnetic anisotropy effect through a LiF/MgO hybrid tunneling barrier

Takayuki Nozaki, Tomohiro Nozaki, Tatsuya Yamamoto, Makoto Konoto, Atsushi Sugihara, Kay Yakushiji, Shinji Yuasa

Summary: Improving the perpendicular magnetic anisotropy (PMA) and voltage-controlled magnetic anisotropy (VCMA) properties are crucial for the development of voltage-controlled magnetoresistive random access memories (VC-MRAM). By inserting an ultrathin LiF layer at the Fe/MgO interface, a significant increase in PMA has been observed, along with a large VCMA coefficient, while maintaining high TMR ratio and high interfacial PMA.

APPLIED PHYSICS LETTERS (2022)

Article Materials Science, Multidisciplinary

Developments in voltage-controlled subnanosecond magnetization switching

Tatsuya Yamamoto, Rie Matsumoto, Takayuki Nozaki, Hiroshi Imamura, Shinji Yuasa

Summary: This article reviews the current research status of magnetization switching utilizing the voltage-controlled magnetic anisotropy (VCMA) effect. It focuses on subnanosecond voltage pulses driven magnetization switching as a promising alternative to the existing spin-transfer-torque technology used in magnetic random-access memories. However, practical issues such as write-error rate, narrow operating window, and the need for an external bias magnetic field are faced by VCMA-driven magnetization switching. Recent developments in the field of VCMA studies are introduced to address these issues from both experimental and theoretical perspectives. Possible material designs for enhancing both the energy efficiency and reliability of VCMA-driven magnetization switching are also discussed.

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS (2022)

Article Materials Science, Multidisciplinary

Enhancing voltage-controlled magnetic anisotropy in Fe80B20/MgO/HfO2 thin films by dielectric constant modulation

Hiroshige Onoda, Tomohiro Nozaki, Shingo Tamaru, Takayuki Nozaki, Shinji Yuasa

Summary: This study systematically investigated the relationship between the voltage-controlled magnetic anisotropy (VCMA) coefficient and the dielectric constant. By controlling the material structure, we successfully manipulated the VCMA coefficient and dielectric constant. The results showed that increasing the dielectric constant can enhance the VCMA effect.

PHYSICAL REVIEW MATERIALS (2022)

Article Nanoscience & Nanotechnology

Large voltage-controlled magnetic anisotropy effect in magnetic tunnel junctions prepared by deposition at cryogenic temperatures

Takayuki Nozaki, Tomohiro Ichinose, Jun Uzuhashi, Tatsuya Yamamoto, Makoto Konoto, Kay Yakushiji, Tadakatsu Ohkubo, Shinji Yuasa

Summary: This study investigates the influence of the buffer material and cryogenic temperature deposition process on the voltage-controlled magnetic anisotropy (VCMA) effect in CoFeB layers in MgO-based magnetic tunnel junctions. The use of TaB buffers allows for a flat and less-contaminated CoFeB/MgO interface while cryogenic temperature deposition enhances the efficiency of the VCMA effect and its annealing tolerance. Introduction of interface engineering methods leads to a large VCMA coefficient.

APL MATERIALS (2023)

暂无数据