Mixing of edge states at a bipolar graphene junction

An atomic force microscope is used to locally manipulate a single layer graphene sheet. Transport measurements in this region as well as in the unmanipulated part reveal different charge carrier densities, while mobilities stay in the order of 10(4) cm(2)(V s)(-1). With a global backgate, the system is tuned from a unipolar n-n' or p-p' junction with different densities to a bipolar p-n junction. Magnetotransport across this junction verifies its nature, showing the expected quantized resistance values as well as the switching with the polarity of the magnetic field. Measurements at higher magnetic fields show a suppression of the mixing of edge states with different polarity at the p-n junction.