4.6 Article

L-valley electron spin dynamics in GaAs

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PHYSICAL REVIEW B
卷 87, 期 4, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.87.041201

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Optical orientation experiments have been performed in GaAs epilayers with photoexcitation energies in the 3 eV region, yielding the photogeneration of spin-polarized electrons in the satellite L valley. We demonstrate that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the Gamma valley following an energy relaxation of several hundreds of meV. Combining these high energy photoexcitation experiments with time-resolved photoluminescence spectroscopy of Gamma -valley spin-polarized photogenerated electrons allows us to deduce a typical L-valley electron spin relaxation time of 200 fs, in agreement with theoretical calculations. DOI: 10.1103/PhysRevB.87.041201

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