期刊
PHYSICAL REVIEW B
卷 88, 期 24, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.88.245410
关键词
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资金
- Swedish Research council
- EU project SCOPE
- Wallenberg foundation
- Office of the Director of National Intelligence (ODNI)
- Intelligence Advanced Research Projects Activity (IARPA)
Measurements of the temperature and bias dependence of single-electron transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low-temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.
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