4.6 Article

Thermal properties of charge noise sources

期刊

PHYSICAL REVIEW B
卷 88, 期 24, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.88.245410

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资金

  1. Swedish Research council
  2. EU project SCOPE
  3. Wallenberg foundation
  4. Office of the Director of National Intelligence (ODNI)
  5. Intelligence Advanced Research Projects Activity (IARPA)

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Measurements of the temperature and bias dependence of single-electron transistors (SETs) in a dilution refrigerator show that charge noise increases linearly with refrigerator temperature above a voltage-dependent threshold temperature, and that its low-temperature saturation is due to SET self-heating. We show further that the two-level fluctuators responsible for charge noise are in strong thermal contact with the electrons in the SET, which can be at a much higher temperature than the substrate. We suggest that the noise is caused by electrons tunneling between the SET metal and nearby potential wells.

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