期刊
PHYSICAL REVIEW B
卷 87, 期 20, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.87.205411
关键词
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资金
- MEXT, Japan [21102003, 24226002]
- Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST) Program from the Japan Society for the Promotion of Science (JSPS)
- Council for Science and Technology Policy
- Murata Science Foundation
- Grants-in-Aid for Scientific Research [23686008, 21102003] Funding Source: KAKEN
We report the experimental determination of Rashba spin-orbit interaction (SOI) strength in two-dimensional electrons in a MgZnO/ZnO heterostructure using electrically detected electron spin resonance. The Rashba parameter is determined to be 7.0 x 10(-14) eV m, which is the second smallest value among prevalent semiconductor heterostructures, following Si/SiGe. A long transverse spin relaxation time was derived to show a maximum value of 27 ns, owing to weak SOI. Our study demonstrates that the ZnO heterostructure is a promising candidate for spintronic devices utilizing long spin coherence.
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