期刊
PHYSICAL REVIEW B
卷 86, 期 16, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.86.165435
关键词
-
资金
- Ministry of Education, Culture, Sports, Science and Technology of Japan [21246006]
- Grants-in-Aid for Scientific Research [21246006] Funding Source: KAKEN
We demonstrate experimentally that graphene quantum capacitance C-q can have a strong impact on transport spectroscopy through the interplay with nearby charge reservoirs. The effect is elucidated in a field-effect-gated epitaxial graphene device, in which interface states serve as charge reservoirs. The Fermi-level dependence of C-q is manifested as an unusual parabolic gate voltage (V-g) dependence of the carrier density, centered on the Dirac point. Consequently, in high magnetic fields B, the spectroscopy of longitudinal resistance (R-xx) vs V-g represents the structure of the unequally spaced relativistic graphene Landau levels (LLs). R-xx mapping vs V-g and B thus reveals the vital role of the zero-energy LL on the development of the anomalously wide nu = 2 quantum Hall state.
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