Monte Carlo study of magnetic resistivity in semiconducting MnTe

We investigate in this paper properties of the spin resistivity in magnetic semiconducting MnTe of the NiAs structure. MnTe is a crossroad semiconductor with a large band gap. It is an antiferromagnet with a Neel temperature around 310 K. Due to this high Neel temperature, there are many applications using its magnetic properties. The method we use here is Monte Carlo simulation, in which we take into account the interaction between itinerant spins and lattice Mn spins. Our results show a very good agreement with experiments on the shape of the spin resistivity near the Neel temperature.