4.6 Article

Scaling of the anomalous Hall effect in SrRuO3

期刊

PHYSICAL REVIEW B
卷 84, 期 17, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.174439

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资金

  1. Israel Science Foundation [599/10]
  2. Israel Academy of Sciences and Humanities [577/07]
  3. US-Israel Binational Science Foundation [2008256]
  4. Aspen Center for Physics

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We measure the anomalous Hall effect (AHE) resistivity rho(xy) in thin films of the itinerant ferromagnet SrRuO3. At low temperatures, the AHE coefficient R-s varies with rho(2)(xx), and at higher temperatures, R-s reaches a peak and then changes sign just below T-c. We find that for all films studied, R-s scales with resistivity in the entire ferromagnetic phase. We attribute the observed behavior to the contribution of the extrinsic side-jumps mechanism and the intrinsic Karplus-Luttinger (Berry phase) mechanism, including the effect of finite scattering rates.

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