期刊
PHYSICAL REVIEW B
卷 84, 期 3, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.035103
关键词
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资金
- Swiss National Science Foundation (SNSF) through the National Centre of Competence in Research 'Materials with Novel Electronic Properties-MaNEP' [200021-120347, IZ73Z0-128026]
- Swiss National Science Foundation (SNF) [200021_120347] Funding Source: Swiss National Science Foundation (SNF)
Far-infrared diagonal and Hall conductivities of multilayer epitaxial graphene on the C face of SiC were measured using magneto-optical absorption and Faraday rotation in magnetic fields up to 7 T and temperatures between 5 and 300 K. Multiple components were identified in the spectra, including (i) a quasiclassical cyclotron resonance, originating from the highly doped graphene layer closest to SiC, (ii) transitions between low-index Landau levels (LLs), which stem from weakly doped layers, and (iii) a broad optical absorption background. Electron-and hole-type LL transitions are optically distinguished and shown to coexist. An electron-hole asymmetry of the Fermi velocity of about 2% was found within one graphene layer, while the Fermi velocity varies by about 10% across the layers. The optical intensity of the LL transitions is several times smaller than is theoretically expected for isolated graphene monolayers without electron-electron and electron-phonon interactions.
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