4.6 Article

Development of orthogonal tight-binding models for Ti-C and Ti-N systems

期刊

PHYSICAL REVIEW B
卷 84, 期 15, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.84.155120

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资金

  1. EPSRC [EP/E065902/1, CAFEP/G004072/1]
  2. German Research Foundation (DFG) [MR 22/5-1, MR 22/5-2, ME 2670/3-1, ME 2670/3-2]
  3. German Ministry of Education and Research (BMBF) [03X0511]
  4. European Commission [NMP.2010.2.5-1.263335]

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We develop p-d orthogonal tight-binding (OTB) models for the description of TiCx and TiNx compounds in the 1.0 > x > 0.5 composition range. For the parametrization of bond integrals we use a recently developed method allowing projection of the one-electron wave functions obtained within the density functional theory onto optimized atom-centered orbitals. The performance of the OTB models is investigated for a wide range of properties: binding energy of elements and compounds, density of states, formation energy of vacancy-ordered defects, elastic constants, and phonon dispersions. The models provide a good description of the ground state properties at 1:1 composition and show a fair transferability for various atomic environments in elemental and binary phases.

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