Enhanced binding energy of manganese acceptors close to the GaAs(110) surface

Surface Induced Asymmetry of Acceptor Wave Functions

(2010) C. Çelebi et al.   PHYSICAL REVIEW LETTERS

Visualizing Critical Correlations Near the Metal-Insulator Transition in Ga1-xMnxAs

(2010) A. Richardella et al.   SCIENCE

Magnetic properties of substitutional Mn in (110) GaAs surface and subsurface layers

(2009) T. O. Strandberg et al.   PHYSICAL REVIEW B

Enhanced Donor Binding Energy Close to a Semiconductor Surface

(2009) A. P. Wijnheijmer et al.   PHYSICAL REVIEW LETTERS

Asymmetry of acceptor wave functions caused by surface-related strain and electric field in InAs

(2008) S. Loth et al.   PHYSICAL REVIEW B

Anisotropic spatial structure of deep acceptor states in GaAs and GaP

(2008) C. Çelebi et al.   PHYSICAL REVIEW B

Atomically precise impurity identification and modification on the manganese doped GaAs(110) surface with scanning tunneling microscopy

(2008) J. K. Garleff et al.   PHYSICAL REVIEW B

Effect of charge manipulation on scanning tunneling spectra of single Mn acceptors in InAs

(2008) Felix Marczinowski et al.   PHYSICAL REVIEW B

STM Images of Subsurface Mn Atoms in GaAs: Evidence of Hybridization of Surface and Impurity States

(2008) J.-M. Jancu et al.   PHYSICAL REVIEW LETTERS

Controlled Charge Switching on a Single Donor with a Scanning Tunneling Microscope

(2008) K. Teichmann et al.   PHYSICAL REVIEW LETTERS