4.6 Article

Spin relaxation in multiple (110) quantum wells

期刊

PHYSICAL REVIEW B
卷 81, 期 11, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.81.115332

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  1. University of Basque Country UPV/EHU [GIU07/40]
  2. Ministry of Science and Innovation of Spain [FIS2009-12773-C02-01]
  3. RFBR
  4. Dynasty Foundation

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We consider theoretically the relaxation of electron spin component parallel to the growth direction in multiple (110) GaAs quantum wells. The sources of spin relaxation are the random Rashba spin-orbit coupling due to the electric field of donors and spin-flip collisions of electrons from different quantum wells. We show that the screening of the Coulomb forces at low temperatures leads to a very strong enhancement of the spin relaxation time. In a degenerate electron gas, the Pauli blocking suppresses the electron-electron collisions, and the leading spin relaxation mechanism comes from the field of donors. If the electron gas is nondegenerate the electron-electron collisions and scattering by the ionized donors give similar contributions to the relaxation rate.

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