期刊
PHYSICAL REVIEW B
卷 79, 期 7, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.073402
关键词
adsorption; energy gap; hydrogen; II-VI semiconductors; monolayers; nanowires; oxygen; wide band gap semiconductors; zinc compounds
资金
- National Basic Research Program of China [2006CB933000]
- Research Grants Council of Hong Kong SAR [CityU 103106]
- German Science Foundation [SPP-1165]
- Centre for Applied Computing and Interactive Media (ACIM) of the City University of Hong Kong
We employ first-principles calculations to investigate the structural stability and electronic properties of zinc oxide (ZnO) nanowires adsorbed with different chemical functional groups. The nanowires with one hydrogen monolayer on the surfaces adsorbed with both O and Zn atoms maintain their bulklike geometries, whereas the surface relaxation is found to be significant for the bare and partially adsorbed nanowires. While a half monolayer coverage of hydrogen on an oxygen-adsorbed surface induces metallic behavior, the adsorption of a full monolayer removes the states from the band gap to render a system with a well-defined band gap, revising previous theoretical predictions of metallicity in the latter. On the other hand, when all surface atoms are saturated, either with hydrogen atoms only or with both OH and H groups, the semiconducting behavior is recovered. Our results open up the possibility of tailoring the electronic properties by controlling the surface adsorption sites.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据