4.6 Article

Consequences of interfacial Fe-O bonding and disorder in epitaxial Fe/MgO/Fe(001) magnetic tunnel junctions

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PHYSICAL REVIEW B
卷 79, 期 22, 页码 -

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AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.224405

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electric admittance; iron; magnesium compounds; magnetic epitaxial layers; magnetic tunnelling; reflection high energy electron diffraction; scanning tunnelling microscopy; spin polarised transport; tunnelling magnetoresistance; X-ray photoelectron spectra

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We report on a thorough experimental investigation of the influence of an FeO layer at the Fe/MgO interface on the magnetotransport properties in epitaxial Fe/MgO/Fe(001) magnetic tunnel junctions. Interfacial oxygen is introduced by adsorbing O-2 on the bottom Fe(001) layer. The morphology and composition of the FeO film are investigated by means of scanning tunneling microscopy, reflection high-energy electron diffraction, and x-ray photoelectrons spectroscopy. We show that the amount of interfacial oxygen can be precisely tuned and that either ordered or disordered FeO layers can be grown. Both Fe-O bonding and interfacial disorder strongly alter the conductances of junctions. However, the tunnel magnetoresistance remains large (>85%) even for large oxygen exposure. Interfacial Fe-O bonds are found to lower the parallel conductance in agreement with theoretical predictions.

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