Review
Energy & Fuels
Jiaying Chen, Youtian Mo, Chaoying Guo, Jiansen Guo, Bingshe Xu, Xi Deng, Quan Xue, Guoqiang Li
Summary: The combination of III-V compound semiconductor materials and organic semiconductor materials is a potential pathway to solve the problems of conventional doped p-n junction solar cells. This review presents the recent progress of organic-inorganic hybrid solar cells based on polymers and III-V semiconductors, including materials, devices, growth processes, patterning and etching processes, advanced device structure designs, and optimization pathways for efficiency enhancement. The future development of such hybrid cells is also discussed.
Article
Materials Science, Multidisciplinary
Philipp Storm, Susanne Selle, Holger von Wenckstern, Marius Grundmann, Michael Lorenz
Summary: Transparent, p-type semiconductor copper iodide (CuI) thin films were grown via pulsed laser deposition on SrF2(111) using water soluble sacrificial layers of sodium bromide (NaBr). The resulting CuI thin films are single crystalline with reduced surface roughness compared to epitaxial CuI grown with rotational domains on other templates. The CuI thin films were subsequently transferred onto glass using epoxy/glue and dissolution of NaBr in a water-vapor atmosphere.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Physics, Multidisciplinary
N. Carlon Zambon, Z. Denis, R. De Oliveira, S. Ravets, C. Ciuti, I. Favero, J. Bloch
Summary: By embedding quantum wells into semiconductor microresonators, tightly confined and mutually interacting excitonic, optical, and mechanical modes can coexist. In this study, we investigate the parametric modulation of optical and excitonic resonances by the interaction with a mechanical mode in the strong exciton-photon coupling regime. We find that the exciton-phonon coupling in semiconductors leads to a significant enhancement of polariton-phonon interactions, making it possible to achieve near-unity single-polariton quantum cooperativity on current semiconductor resonator platforms. We also analyze how polariton nonlinearities affect dynamical backaction, altering the ability to cool or amplify the mechanical motion.
PHYSICAL REVIEW LETTERS
(2022)
Correction
Engineering, Electrical & Electronic
J. F. Cheng, X. Li, X. M. Shao, T. Li, Y. J. Ma, Y. Gu, S. Y. Deng, Y. G. Zhang, H. M. Gong
Summary: The above article discusses the affiliations of the authors.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2022)
Article
Computer Science, Information Systems
Ahid S. Hajo, Sascha Preu, Leonid Kochkurov, Thomas Kusserow, Oktay Yilmazoglu
Summary: This study investigates fully integrated THz detectors using silver NWs as bridge contacts on highly doped GaAs and InGaAs layers, achieving improved performance at zero bias with a maximum cut-off frequency of 2.6 THz. Initial THz measurements suggest a responsivity of 0.81 A/W and low NEP value of 7 pW/root Hz at 1 THz.
Article
Chemistry, Multidisciplinary
Sergey V. Balakirev, Natalia E. Chernenko, Mikhail M. Eremenko, Oleg A. Ageev, Maxim S. Solodovnik
Summary: This study proposes a new approach to control the size of nanostructures formed by droplet epitaxy using ultra-low group-V flux. It demonstrates that larger droplets can be reduced to stable, small-sized nanostructures suitable for quantum dot applications, while smaller droplets are unstable and difficult to control. The research expands the capabilities of droplet epitaxy by observing phenomena related to the transformation of droplets into dots, rings, and holes under specific growth conditions.
Article
Engineering, Electrical & Electronic
Ioannis E. Fragkos, Wei Sun, Damir Borovac, Renbo Song, Jonathan J. Wierer, Nelson Tansu
Summary: This study investigates an active region design based on InGaN / delta-InN quantum well (QW) for potential high-efficiency visible light emitters. The results demonstrate a large wavelength redshift and an increase in the electron-hole wavefunction overlap for the delta-structure compared to the conventional InGaN QW.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2022)
Article
Chemistry, Multidisciplinary
Pan Xia, Bin Sun, Margherita Biondi, Jian Xu, Ozan Atan, Muhammad Imran, Yasser Hassan, Yanjiang Liu, Joao M. Pina, Amin Morteza Najarian, Luke Grater, Koen Bertens, Laxmi Kishore Sagar, Husna Anwar, Min-Jae Choi, Yangning Zhang, Minhal Hasham, F. Pelayo Garcia de Arquer, Sjoerd Hoogland, Mark W. B. Wilson, Edward H. Sargent
Summary: This research reports a novel co-passivation strategy for fabricating indium arsenide CQD photodetectors, which maintains charge carrier mobility and improves passivation by using methyl ammonium acetate and indium chloride as ligands, resulting in a doubling of the photoluminescence lifetime. The resulting devices achieved a 37% external quantum efficiency (EQE) at 950 nm, the highest reported value for InAs CQD photodetectors.
ADVANCED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Wu-Kang Kim, Pavlo Bidenko, Jongmin Kim, Jaeho Sim, Joon-Kyu Han, Seongkwang Kim, Dae-Myeong Geum, Sanghyeon Kim, Yang-Kyu Choi
Summary: A vertical bi-stable resistor (biristor) made of In0.53Ga0.47As demonstrated sub-1 V operation, with remarkable reduction in latch-up voltage due to its small bandgap and scaled base length of 150 nm. The epitaxially grown n-p-n structure allowed for an abrupt p-n junction, which was key in reducing the latch-up voltage. The physical mechanism of carrier transport in the InGaAs biristor was further explored through TCAD simulations.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Jong Yul Park, Byoung-Gue Min, Jong-Min Lee, Woojin Chang, Dong Min Kang, E-San Jang, Junhyung Kim, Jeong-Gil Kim
Summary: The authors propose criteria for recess etching in order to fabricate T-gates for InGaAs high electron mobility transistors (HEMTs). By patterning additional rectangular pads on the source and drain metals during e-beam lithography, they are able to measure the drain-to-source resistance (R-ds) and current (I-ds). The ratio (& UGamma;) of R-ds and I-ds before and after etching can be used as a criterion to determine the optimal time to stop the etching process. By applying the proposed criteria, the authors have successfully fabricated InGaAs metamorphic HEMTs with excellent performance.
ELECTRONICS LETTERS
(2023)
Article
Engineering, Electrical & Electronic
Yanting Kong, Rong Ma, Bin Shen, Qingnan Yu
Summary: In this paper, a simple and effective detection method for the thickness fluctuation of InGaAs layers in InxGa1-xAs-based IRC structure is proposed through point-to-point acquisition. The relationship between InxGa1-xAs thickness and spectral intensity is established, and the thickness fluctuation of normal and indium-deficient InGaAs layers is determined by comparing the intensity of dual peaks, which are caused by indium atom migration.
IEEE PHOTONICS JOURNAL
(2022)
Article
Materials Science, Multidisciplinary
Asta Griguceviciene, Putinas Kalinauskas, Laurynas Staisiunas, Konstantinas Leinartas, Algirdas Selskis, Eimutis Juzeliunas
Summary: This study presents a photoelectrochemical (PEC) method for depositing silicon and silicon-carbon layers at 40°C using silicon tetrachloride as a precursor. The semiconductor substrates are activated by white LED illumination to make them conductive, allowing for the deposition of amorphous layers. The proposed method has potential applications in batteries, anti-corrosion coatings, photovoltaics, and PEC electrodes for hydrogen production.
Article
Nanoscience & Nanotechnology
Thomasina Zaengle, Ursula J. Gibson, Thomas W. Hawkins, Colin McMillen, Basanta Ghimire, Apparao M. Rao, John Ballato
Summary: A novel extension to the molten core method was employed to fabricate a glass-clad, crystalline gallium arsenide (GaAs) core fiber for the first time. By using tin as a flux, long lengths of glass-clad, crystalline GaAs-containing fibers were successfully drawn at a temperature where volatility is negligible. Laser annealing was utilized to differentiate the Sn and GaAs phases along the fiber. This work presents a new tool for scalable fabrication of glass-clad crystalline core materials and enables the development of novel and useful optoelectronic devices within the fiber.
Article
Materials Science, Multidisciplinary
B. O. Alaydin, D. Altun, E. Ozturk
Summary: This paper studies the optical properties of semi-elliptical InAs quantum dots embedded in GaAs. It shows that the wetting layer thickness has a small effect on the transition between energy levels 1 and 2, but has a significant impact on the dipole moment matrix element (DMME) of the transitions between energy levels 2 and 3, and 1 and 3. The linear absorption coefficients reach their maximum values at a wetting layer thickness of 4 A. Additionally, applying an electric field in the axial direction enhances the DMME of the transitions between energy levels 2 and 3, and 1 and 3, resulting in very high linear absorption coefficients.
Article
Engineering, Electrical & Electronic
Patrick Runge, Sten Seifert
Summary: A generalized parameter set for In1-x-yAlyGaxAs compound semiconductors has been derived, allowing the modeling of wavelength-dependent refractive index and absorption in the near-infrared and short-wave infrared wavelength regime.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2022)
Article
Physics, Applied
D. J. Egger, M. Ganzhorn, G. Salis, A. Fuhrer, P. Mueller, P. Kl. Barkoutsos, N. Moll, I. Tavernelli, S. Filipp
PHYSICAL REVIEW APPLIED
(2019)
Article
Multidisciplinary Sciences
Serge Markmann, Christian Reichl, Werner Wegscheider, Gian Salis
NATURE COMMUNICATIONS
(2019)
Article
Physics, Applied
M. Ganzhorn, D. J. Egger, P. Barkoutsos, P. Ollitrault, G. Salis, N. Moll, M. Roth, A. Fuhrer, P. Mueller, S. Woerner, I. Tavernelli, S. Filipp
PHYSICAL REVIEW APPLIED
(2019)
Review
Physics, Multidisciplinary
M. Pechal, G. Salis, M. Ganzhorn, D. J. Egger, M. Werninghaus, S. Filipp
Summary: This paper discusses the control and measurement capabilities of hidden qubits in certain physical architectures where direct addressability is lacking. It demonstrates full control and measurement capabilities in a superconducting two-qubit device with local single-qubit control and iSWAP and controlled-phase two-qubit interactions enabled by a tunable coupler. The iterative tune-up process for characterizing gate sets used for quantum process tomography and evaluating gate fidelities is also introduced.
Article
Quantum Science & Technology
M. Mergenthaler, C. Muller, M. Ganzhorn, S. Paredes, P. Muller, G. Salis, V. P. Adiga, M. Brink, M. Sandberg, J. B. Hertzberg, S. Filipp, A. Fuhrer
Summary: The study shows that Ne ion bombardment reduces the relaxation rate of qubits, while SF6 ion bombardment can adjust qubit frequencies; UV-light and NH3 treatments are beneficial for removing magnetic adsorbates from chip surfaces; these treatments help improve the performance of quantum processors.
NPJ QUANTUM INFORMATION
(2021)
Review
Physics, Applied
Alexey Kimel, Anatoly Zvezdin, Sangeeta Sharma, Samuel Shallcross, Nuno de Sousa, Antonio Garcia-Martin, Georgeta Salvan, Jaroslav Hamrle, Ondrej Stejskal, Jeffrey McCord, Silvia Tacchi, Giovanni Carlotti, Pietro Gambardella, Gian Salis, Markus Muenzenberg, Martin Schultze, Vasily Temnov, Igor Bychkov, Leonid N. Kotov, Nicolo Maccaferri, Daria Ignatyeva, Vladimir Belotelov, Claire Donnelly, Aurelio Hierro Rodriguez, Iwao Matsuda, Thierry Ruchon, Mauro Fanciulli, Maurizio Sacchi, Chunhui Rita Du, Hailong Wang, N. Peter Armitage, Mathias Schubert, Vanya Darakchieva, Bilu Liu, Ziyang Huang, Baofu Ding, Andreas Berger, Paolo Vavassori
Summary: This article provides a comprehensive overview of recent developments, advances, and emerging research directions in the field of magneto-optics. It covers various applications of magneto-optical effects in different materials and spectral ranges. It serves as an important reference for emerging research directions in modern magneto-optics.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Physics, Applied
Michele Aldeghi, Rolf Allenspach, Gian Salis
Summary: On-chip micromagnets are used for electrically controlled quantum gates on electron spin qubits. A design is presented for driving spin qubits arranged in a linear chain and strongly confined in directions lateral to the chain. The concept is validated using micromagnetic simulations and spin-polarized scanning electron microscopy of Fe nanomagnets. The design meets several requirements for a scalable spin qubit design.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Applied
Makoto Kohda, Takeshi Seki, Yasushi Yuminaka, Tetsuya Uemura, Keito Kikuchi, Gian Salis
Summary: This article discusses the differences between waves and particle properties, as well as their applications in data processing and storage. It introduces the information theory of wave-parallel computing and the fundamental properties needed for wave-based information carriers. The potential of electron spin waves and magnons as information carriers for processing and storage is examined. The interconversion among light helicity, electron spin waves, and magnons is also discussed.
APPLIED PHYSICS LETTERS
(2023)
Article
Physics, Multidisciplinary
Marek Pechal, Federico Roy, Samuel A. Wilkinson, Gian Salis, Max Werninghaus, Michael J. Hartmann, Stefan Filipp
Summary: This study demonstrates a controlled gate implemented in superconducting qubits, which generalizes classical perceptrons as the basic building block of quantum neural networks. Through tuning gate length, qubit coupling, and drive frequency, full control over the perceptron activation function, input weight, and bias is achieved. The gate performs a multiqubit entangling operation in a single step, requiring fewer gates than traditional decomposition.
PHYSICAL REVIEW RESEARCH
(2022)
Article
Materials Science, Multidisciplinary
Daisuke Iizasa, Asuka Aoki, Takahito Saito, Junsaku Nitta, Gian Salis, Makoto Kohda
Summary: This study investigates the spatiotemporal spin dynamics under spin-orbit interaction in a (001) GaAs two-dimensional electron gas using magneto-optical Kerr rotation microscopy. It was found that the induction of spin precession frequency nonlinearly depends on the diffusion velocity near the cancellation between spin-orbit field and external magnetic field, contrary to conventional expectations. This unexpected behavior is attributed to the enhancement of spin relaxation anisotropy by the electron velocity perpendicular to the diffused direction.
Article
Physics, Multidisciplinary
M. Ganzhorn, G. Salis, D. J. Egger, A. Fuhrer, M. Mergenthaler, C. Mueller, P. Mueller, S. Paredes, M. Pechal, M. Werninghaus, S. Filipp
PHYSICAL REVIEW RESEARCH
(2020)
Article
Optics
Gian Salis, Nikolaj Moll, Marco Roth, Marc Ganzhorn, Stefan Filipp
Article
Materials Science, Multidisciplinary
S. Gelfert, C. Frankerl, C. Reichl, D. Schuh, G. Salis, W. Wegscheider, D. Bougeard, T. Korn, C. Schueller
Article
Optics
Marco Roth, Nikolaj Moll, Gian Salis, Marc Ganzhorn, Daniel J. Egger, Stefan Filipp, Sebastian Schmidt
Proceedings Paper
Optics
S. Gelfert, C. Frankerl, C. Reichl, D. Schuh, G. Salis, W. Wegscheider, D. Bougeard, T. Korn, C. Schueller
