期刊
PHYSICAL REVIEW B
卷 79, 期 4, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.045312
关键词
ab initio calculations; band structure; elemental semiconductors; oxidation; reflectivity; silicon; X-ray photoelectron spectra
资金
- European Community [NMP4-CT-2004-500198, 211956]
- INFM [352/2004, 426/2005]
We have investigated the first stages of the room-temperature oxidation of the Si(100) surface combining experimental surface optical spectra with the results of ab initio calculations. High-resolution reflectance anisotropy spectra (RAS) and surface differential reflectance spectra (SDRS) have been measured for the clean surfaces and various exposures up to 183 L, which have been compared with calculated RAS and SDRS in the independent-particle approximation. Our results, yielding a consistent description of both RAS and SDRS, suggest the coexistence of different structural domains, whose weight changes smoothly with the oxygen exposure. The main oxidation mechanisms together with their occurrence versus coverage are discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据