期刊
PHYSICAL REVIEW B
卷 79, 期 19, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.195403
关键词
doping; graphene; Landau levels; localised states; magnetic fields; nanostructured materials; quantum dots
资金
- Brazilian Council for Research (CNPq)
- Flemish Science Foundation (FWO-V1)
- Belgian Science Policy (IAP)
- Canadian NSERC [OGP0121756]
We investigate localized electron and hole states in parabolic quantum dots of biased graphene bilayers in the presence of a perpendicular magnetic field. These quantum dots can be created by means of nanostructured gates or by position-dependent doping, which can create a gap in the otherwise gapless dispersion of a graphene bilayer. Numerical results show the energy levels of confined electrons and holes as a function of the dot parameters and the magnetic field. Remarkable crossings of energy levels are found.
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