Article
Multidisciplinary Sciences
Honghwi Park, Heungsup Won, Changhee Lim, Yuxuan Zhang, Won Seok Han, Sung-Bum Bae, Chang-Ju Lee, Yeho Noh, Junyeong Lee, Jonghyung Lee, Sunghwan Jung, Muhan Choi, Sunghwan Lee, Hongsik Park
Summary: This study reports a technique that can precisely release epitaxial layers in commonly used III-V heterostructures without the need for a sacrificial buffer. The target interface for separation can be selectively determined by adjusting process conditions. This technique will provide higher fabrication flexibility in compound semiconductor technology.
Article
Engineering, Electrical & Electronic
T. Paulauskas, J. Devenson, S. Stanionyte, M. Skapas, V Karpus, B. Cechavicius, S. Tumenes, V Strazdiene, B. Sebeka, V Pacebutas
Summary: Molecular beam epitaxy growth and analysis of GaAsBi on compositional step-graded InGaAs buffer layers are presented in this study. The developed buffer is only 240 nm thick, exhibits very low surface roughness while reaching up to 0.46% lattice-mismatch with a GaAs substrate. Reciprocal-space mappings showed that 500 nm thick GaAsBi layers with 2.7%-5.3% Bi remain pseudomorphic with the InGaAs buffer, in contrast to GaAsBi grown on GaAs that were found to incur up to 50% lattice relaxation. CuPtB-type ordering and associated polarized photoluminescence were also found in the bismide layers grown on the InGaAs buffers. Optical anisotropy of a strain-free 2.7% Bi GaAsBi was further analysed by a suite of optical techniques indicating that the valence band splitting is similar to 40 meV. This study advances synthesis techniques of thick GaAsBi layers for optoelectronic device applications.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Multidisciplinary Sciences
Jijie Huang, Weijin Chen
Summary: This article summarizes the methods for fabricating high-quality flexible oxide thin films with novel functionalities and applications, and introduces various functionalities and applications of these films.
Article
Nanoscience & Nanotechnology
Alberto Anadon, Adrian Gudin, Ruben Guerrero, Iciar Arnay, Alejandra Guedeja-Marron, Pilar Jimenez-Cavero, Jose Manuel Diez Toledano, Fernando Ajejas, Maria Varela, Sebastien Petit-Watelot, Irene Lucas, Luis Morellon, Pedro Antonio Algarabel, Manuel Ricardo Ibarra, Rodolfo Miranda, Julio Camarero, Juan Carlos Rojas-Sanchez, Paolo Perna
Summary: The study shows that a graphene monolayer between Co and a heavy metal (HM) can effectively preserve the spin current injected into the HM from the bottom Co layer, as revealed by thermo-spin measurements. The presence of the graphene monolayer leads to a reduction in the sum of spin Seebeck and interfacial contributions, independent of the spin Hall angle sign of the HM used.
Article
Crystallography
Junhong Chen, Min Guan, Shangyu Yang, Siqi Zhao, Guoguo Yan, Zhanwei Shen, Wanshun Zhao, Lei Wang, Xingfang Liu, Guosheng Sun, Yiping Zeng
Summary: SiC is an excellent semiconductor material with high thermal conductivity, stable chemical properties, and high critical breakdown field strength. This paper investigates the epitaxial growth of SiC on n-type SiC substrates and analyzes the effects of growth temperature on the surface morphology of SiC epitaxial layers. The results show that higher growth temperature can lead to smoother surface and higher content of 4H-SiC.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Physics, Applied
Yu Xiang, Songchun Xie, Zonghuan Lu, Xixing Wen, Jian Shi, Morris Washington, Gwo-Ching Wang, Toh-Ming Lu
Summary: There is a growing interest in fabricating mixed-dimensional thin film materials, particularly 2D to 3D and 3D to 2D heterostructures. This study investigates the formation of incommensurate domain boundaries in epitaxial films with weak interface interactions, showing how domain boundaries are inherent due to random nucleation sites of domains in an overlayer. The findings suggest that the average domain size in incommensurate epitaxial films depends on the density of nucleation sites, with potential implications for generalizing to other weak interface interaction cases.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Chemistry, Multidisciplinary
Qiangsheng Lu, Congcong Le, Xiaoqian Zhang, Jacob Cook, Xiaoqing He, Mohammad Zarenia, Mitchel Vaninger, Paul F. Miceli, David J. Singh, Chang Liu, Hailang Qin, Tai-Chang Chiang, Ching-Kai Chiu, Giovanni Vignale, Guang Bian
Summary: This study proposes a new method to achieve flat band physics in monolayer graphene by substrate modulation. Experimental results on the graphene/SiC heterostructure demonstrate that substrate modulation leads to Dirac fermion cloning and the proximity of the two Dirac cones in monolayer graphene. Theoretical modeling confirms the cloning mechanism and predicts the emergence of moire flat bands at certain magic lattice constants of the substrate. This study suggests that epitaxial single monolayer graphene on suitable substrates is a promising platform for exploring exotic many-body quantum phases arising from interactions between Dirac electrons.
ADVANCED MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Tiansheng Mu, Shuaifeng Lou, Nathaniel Graham Holmes, Changhong Wang, Mengxue He, Baicheng Shen, Xiaoting Lin, Pengjian Zuo, Yulin Ma, Ruying Li, Chunyu Du, Jiajun Wang, Geping Yin, Xueliang Sun
Summary: By structurally manipulating the silicon composite anode T-Si@C, a stable configuration has been achieved to enhance the energy storage performance of lithium-ion batteries. The anode exhibits outstanding long-term cycling reversibility and good rate capability, as well as superior electrochemical reversibility in full cells.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Physics, Multidisciplinary
Kenneth A. Lin, Nitin Prasad, G. William Burg, Bo Zou, Keiji Ueno, Kenji Watanabe, Takashi Taniguchi, Allan H. MacDonald, Emanuel Tutuc
Summary: In this study, we observed enhanced interlayer tunneling in a twist-controlled double monolayer graphene heterostructure when the top and bottom layer filling factors are near specific values, leading to stable interlayer conductance peaks at zero bias, regardless of variations in layer filling factor, indicating the emergence of interlayer phase coherence.
PHYSICAL REVIEW LETTERS
(2022)
Article
Chemistry, Multidisciplinary
James P. Barnard, Robynne L. Paldi, Matias Kalaswad, Zihao He, Hongyi Dou, Yizhi Zhang, Jianan Shen, Dongqi Zheng, Neil R. Dilley, Raktim Sarma, Aleem M. Siddiqui, Peide D. Ye, Haiyan Wang
Summary: Integration of functional complex oxides with nanoelectronic devices has become a topic of great interest. However, integrating them with Si-based devices is challenging due to material and processing compatibility issues. In this study, a buffer stack of TiN/SrTiO3/CeO2 was used to successfully integrate the BFMO layered supercell phase on Si with high epitaxial quality. The microstructure, magnetic, ferroelectric, and optical properties of BFMO films on Si were characterized and compared with those on SrTiO3 single-crystal substrates, showing comparable epitaxial quality and physical properties.
CRYSTAL GROWTH & DESIGN
(2023)
Article
Physics, Applied
Anurag Vohra, Karen Geens, Ming Zhao, Olga Syshchyk, Herwig Hahn, Dirk Fahle, Benoit Bakeroot, Dirk Wellekens, Benjamin Vanhove, Robert Langer, Stefaan Decoutere
Summary: In this study, the epitaxial growth of a GaN buffer structure with a hard breakdown voltage of >1200V on 200mm engineered poly-AlN substrates was successfully demonstrated. This achievement is significant for high voltage GaN-based power applications, such as electric cars.
APPLIED PHYSICS LETTERS
(2022)
Article
Multidisciplinary Sciences
Vladimir S. Prudkovskiy, Yiran Hu, Kaimin Zhang, Yue Hu, Peixuan Ji, Grant Nunn, Jian Zhao, Chenqian Shi, Antonio Tejeda, David Wander, Alessandro De Cecco, Clemens B. Winkelmann, Yuxuan Jiang, Tianhao Zhao, Katsunori Wakabayashi, Zhigang Jiang, Lei Ma, Claire Berger, Walt A. de Heer
Summary: This study demonstrates that annealed edges in conventionally patterned graphene grown on a silicon carbide substrate are stabilized and support a protected edge state. The edge state has a long mean free path and involves a non-degenerate zero-energy quasiparticle.
NATURE COMMUNICATIONS
(2022)
Article
Physics, Applied
Manyu Dang, Huiwen Deng, Suguo Huo, Raghavendra R. Juluri, Ana M. Sanchez, Alwyn J. Seeds, Huiyun Liu, Mingchu Tang
Summary: The monolithic integration of III-V optoelectronic devices on the Si platform is becoming popular due to its advantages of low cost, less complexity, and high yield for mass production. This paper investigates different dislocation filter layers (DFLs) for reducing the threading dislocation density (TDD) in GaAs buffer layers on Si substrates. The InAlGaAs asymmetric step-graded buffer layer (ASG) shows the lowest TDD value and surface roughness. Further optimization of the InAlGaAs ASG through thermal cyclic annealing achieves a low surface TDD for a 2 & mu;m GaAs/InAlGaAs ASG buffer layer grown on Si.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Chemistry, Physical
Shivi Rathore, Dinesh Kumar Patel, Mukesh Kumar Thakur, Golam Haider, Martin Kalbac, Mattias Kruskopf, Chieh- Liu, Albert F. Rigosi, Randolph E. Elmquist, Chi-Te Liang, Po-Da Hong
Summary: Epitaxial graphene (EG) on 4H-SiC with an interfacial buffer layer (IBL) shows improved photoresponsivity, enabling positive and negative photoresponses for different laser excitations. The broadband binary photoresponse is mainly due to the energy band alignment at the IBL/EG interface and the sensitive work function of EG, resulting in a photoresponsivity of >10 A/W under certain conditions. These results pave the way for selective light-triggered logic devices based on EG and open new possibilities for broadband photodetection.
Article
Chemistry, Multidisciplinary
Hyung-Jin Choi, Jun Young Lee, Soo Young Jung, Ruiguang Ning, Min-Seok Kim, Sung-Jin Jung, Sung Ok Won, Seung-Hyub Baek, Ji-Soo Jang
Summary: In this research, epitaxial growth of ((2) over bar 01)-oriented ss-Ga2O3 thin films on (001) Si substrate was achieved using pulsed laser deposition technique with epitaxial yttria-stabilized zirconia (YSZ) buffer layers. The films showed biaxial compressive strain on YSZ single-crystal substrates and biaxial tensile strain on YSZ-buffered Si substrates. Postannealing improved the crystalline quality of the films. High-resolution X-ray diffraction analyses revealed eight in-plane domain variants in the epitaxial ((2) over bar 01) ss-Ga2O3 thin films on Si, allowing for the large difference in the crystal structure between monoclinic ss-Ga2O3 and cubic YSZ. These results provide a pathway for integrating epitaxial ss-Ga2O3 thin films on Si substrates and expanding their application beyond high-power electronics.
Article
Chemistry, Multidisciplinary
Changhua Bao, Qian Li, Sheng Xu, Shaohua Zhou, Xiang-Yu Zeng, Haoyuan Zhong, Qixuan Gao, Laipeng Luo, Dong Sun, Tian-Long Xia, Shuyun Zhou
Summary: This study reveals the ultrafast dynamics of Dirac fermions in a 3D Dirac semimetal, showing their cooling mechanism and population inversion phenomenon. The linear dependence of relaxation rate on energy suggests cooling through intraband relaxation, and the observation of accumulated photoexcited carriers in the conduction band indicates population inversion with a relatively long lifetime compared to 2D graphene.
Article
Instruments & Instrumentation
Changhua Bao, Haoyuan Zhong, Shaohua Zhou, Runfa Feng, Yuan Wang, Shuyun Zhou
Summary: Time- and angle-resolved photoemission spectroscopy (TrARPES) is a powerful technique for studying the ultrafast dynamics and phase transitions in quantum materials. However, the lack of tunable probe photon energy has limited its application in 3D quantum materials. In this study, a highly tunable TrARPES system with good energy and time resolution is developed, enabling the exploration of ultrafast dynamics in 3D quantum materials.
REVIEW OF SCIENTIFIC INSTRUMENTS
(2022)
Article
Multidisciplinary Sciences
Wei Lu, Zipu Fan, Yunkun Yang, Junchao Ma, Jiawei Lai, Xiaoming Song, Xiao Zhuo, Zhaoran Xu, Jing Liu, Xiaodong Hu, Shuyun Zhou, Faxian Xiu, Jinluo Cheng, Dong Sun
Summary: This study reveals the transient photothermoelectric response of Dirac semimetallic Cd3As2, namely the photo-Seebeck effect and photo-Nernst effect, by studying the terahertz emission from the transient photocurrent induced by these effects. The response clearly indicates an order of magnitude enhancement on transient photothermoelectric current generation when a weak magnetic field is applied. These results highlight the enhancement of thermoelectric performance can be achieved in topological Dirac semimetals based on the Nernst effect.
NATURE COMMUNICATIONS
(2022)
Article
Physics, Multidisciplinary
Haoxiong Zhang, Awabaikeli Rousuli, Kenan Zhang, Laipeng Luo, Chenguang Guo, Xin Cong, Zuzhang Lin, Changhua Bao, Hongyun Zhang, Shengnan Xu, Runfa Feng, Shengchun Shen, Kun Zhao, Wei Yao, Yang Wu, Shuaihua Ji, Xi Chen, Pingheng Tan, Qi-Kun Xue, Yong Xu, Wenhui Duan, Pu Yu, Shuyun Zhou
Summary: Reducing the dimensionality of layered materials can lead to unique properties, but often at the expense of other important properties. By intercalating bulk crystals of NbSe2 with cations from ionic liquids, the superconducting properties of NbSe2 can be controlled, resulting in Ising superconductivity that is similar to the non-intercalated bulk crystal but more stable than a monolayer flake. Intercalation induces electron doping, allowing tailored properties beyond those of bulk crystals and monolayer samples.
Article
Materials Science, Multidisciplinary
Haoxiong Zhang, Awabaikeli Rousuli, Kenan Zhang, Haoyuan Zhong, Yang Wu, Pu Yu, Shuyun Zhou
Summary: Manipulating the strength of interlayer coupling is an effective strategy to induce intriguing properties in layered materials. Recent studies have reported enhanced superconductivity in Weyl semimetal MoTe2 and WTe2 through ionic liquid (IL) cation intercalation. In this study, by inserting IL cations with different sizes into MoTe2, the interlayer spacing of the intercalated MoTe2 samples was tuned, revealing the dependence of superconducting transition temperature T(c) on the interlayer spacing. The results show that T(c) increases with the interlayer spacing, indicating the importance of weakened interlayer coupling in superconductivity. Interestingly, the intercalation-induced superconductivity exhibits a high Ginzburg-Landau anisotropy, suggesting a quasi-two-dimensional nature where adjacent superconducting layers are coupled through Josephson tunneling.
Article
Multidisciplinary Sciences
Shaohua Zhou, Changhua Bao, Benshu Fan, Hui Zhou, Qixuan Gao, Haoyuan Zhong, Tianyun Lin, Hang Liu, Pu Yu, Peizhe Tang, Sheng Meng, Wenhui Duan, Shuyun Zhou
Summary: Time-periodic light field has been used to manipulate quantum states in solid-state materials, cold atoms, and photonic systems. This is achieved through interaction with photon-dressed Floquet states in the strong-coupling limit, known as Floquet engineering. In this study, experimental evidence of momentum-resolved Floquet band engineering in a model semiconductor, black phosphorus, is reported using time and angle-resolved photoemission spectroscopy measurements. Strong band renormalization and light-induced dynamical gap opening are observed near the band edges under near-resonance pumping, along with the emergence of Floquet sidebands. The band renormalization shows a selection rule favoring pump polarization along the armchair direction, indicating pseudospin selectivity for Floquet band engineering enforced by lattice symmetry. This work demonstrates pseudospin-selective Floquet band engineering in black phosphorus and provides important guiding principles for Floquet engineering of semiconductors.
Article
Multidisciplinary Sciences
Ke Zhang, Guo Chen, Shaohua Zhou, Zi Yuan, Xu Gu, Duanliang Zhou, Yuan Wang, Xinyu Gao, Yucheng Ma, Runzhe Xu, Zaiqiao Bai, Peng Liu, Lexian Yang, Shuyun Zhou, Shoushan Fan, Kaili Jiang
Summary: In this article, the concepts of optical blackbody and electron blackbody are introduced, which have significant implications for the study of quantum mechanics. Vertically aligned carbon nanotube arrays are used as an example of electron blackbodies, which can achieve ideal electron absorption and emission at different temperatures. This concept can also be extended to blackbodies for extreme ultraviolet, X-ray, and gamma-ray photons, as well as neutrons, protons, and other elementary particles.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
(2023)
Article
Instruments & Instrumentation
Haoyuan Zhong, Changhua Bao, Tianyun Lin, Shaohua Zhou, Shuyun Zhou
Summary: Developing a widely tunable vacuum ultraviolet (VUV) source with a sub-100 fs pulse duration is critical for ultrafast pump-probe techniques. By designing a new KBBF device, an optimum pulse duration of 55 fs is obtained, and a high time resolution of 81-95 fs is achieved for probe photon energies ranging from 5.3-7.0 eV.
REVIEW OF SCIENTIFIC INSTRUMENTS
(2022)
Article
Energy & Fuels
Nianpeng Lu, Zhuo Zhang, Yujia Wang, Hao-Bo Li, Shuang Qiao, Bo Zhao, Qing He, Sicheng Lu, Cong Li, Yongshun Wu, Mingtong Zhu, Xiangyu Lyu, Xiaokun Chen, Zhuolu Li, Meng Wang, Jingzhao Zhang, Sze Chun Tsang, Jingwen Guo, Shuzhen Yang, Jianbing Zhang, Ke Deng, Ding Zhang, Jing Ma, Jun Ren, Yang Wu, Junyi Zhu, Shuyun Zhou, Yoshinori Tokura, Ce-Wen Nan, Jian Wu, Pu Yu
Summary: A solid oxide proton conductor, HSrCoO2.5, shows unusually high proton conductivity between 40°C and 140°C, suggesting the potential use of solid oxide materials as proton-conducting electrolytes in low-temperature devices.
Article
Materials Science, Multidisciplinary
Haoyuan Zhong, Hongyun Zhang, Haoxiong Zhang, Ting Bao, Kenan Zhang, Shengnan Xu, Laipeng Luo, Awabaikeli Rousuli, Wei Yao, Jonathan D. Denlinger, Yaobo Huang, Yang Wu, Yong Xu, Wenhui Duan, Shuyun Zhou
Summary: We report the superconducting and electronic structure properties of a natural van der Waals superlattice (PbSe)(1.14)NbSe2. Anisotropic superconductivity with a higher transition temperature than monolayer NbSe2 is revealed by transport measurements. ARPES measurements reveal the two-dimensional electronic structure and charge transfer characteristics. Our study suggests that natural van der Waals superlattices can achieve intriguing properties distinct from bulk and monolayer samples.
PHYSICAL REVIEW MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Runfa Feng, Wei Wang, Changhua Bao, Zichun Zhang, Fei Wang, Hongyun Zhang, Junjie Yao, Yong Xu, Pu Yu, Shuai-Hua Ji, Chen Si, Shuyun Zhou
Summary: This study reports the selective growth of monolayer TaTe2 films with different phases and superstructures by controlling the growth temperature and post-growth annealing treatment. The different electronic structures of 1H-TaTe2 and 1T-TaTe2 films are revealed through experimental measurements and theoretical calculations. The transition from a root 19x root 19 superstructure to a new 2 x 2 superstructure is observed in the annealed 1H-TaTe2 film.
ADVANCED MATERIALS
(2023)
Article
Multidisciplinary Sciences
Fei Wang, Yang Zhang, Zhijie Wang, Haoxiong Zhang, Xi Wu, Changhua Bao, Jia Li, Pu Yu, Shuyun Zhou
Summary: In this study, the authors demonstrate a self-intercalation method driven by ionic liquid gating to obtain high-quality PdTe and NiTe single crystals from PdTe2 and NiTe2, respectively. This synthesis pathway for transition metal monochalcogenides provides new opportunities for exploring their unique properties, such as emergent superconductivity.
NATURE COMMUNICATIONS
(2023)
Review
Multidisciplinary Sciences
Hongyun Zhang, Tommaso Pincelli, Chris Jozwiak, Takeshi Kondo, Ralph Ernstorfer, Takafumi Sato, Shuyun Zhou
Summary: The translation introduces the importance of electronic structure in solid-state materials and the advancement of ARPES technique for observing and studying electronic structures.
NATURE REVIEWS METHODS PRIMERS
(2022)
Article
Materials Science, Multidisciplinary
Changhua Bao, Hongyun Zhang, Xi Wu, Shaohua Zhou, Qian Li, Pu Yu, Jia Li, Wenhui Duan, Shuyun Zhou
Summary: This study reveals the presence of an extended flat band below the Fermi level in Li-intercalated graphene, indicating a strong electron-phonon interaction. The evolution of the band structure upon Li intercalation shows the simultaneous appearance of the extended flat band and the Kekulé order.
Review
Physics, Applied
Changhua Bao, Peizhe Tang, Dong Sun, Shuyun Zhou
Summary: The interaction between light and 2D and topological materials serves as a fascinating control knob for inducing emergent properties and achieving new functionalities in ultrafast timescales, from femtoseconds to picoseconds. Recent experimental progress on light-induced phenomena, such as Bloch-Floquet states and photo-induced phase transitions, has been discussed, with perspectives on the opportunities of proposed light-induced phenomena and open experimental challenges also provided.
NATURE REVIEWS PHYSICS
(2022)