期刊
PHYSICAL REVIEW B
卷 80, 期 5, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.054417
关键词
coercive force; ferromagnetic resonance; gallium arsenide; magnetic anisotropy; manganese compounds; nanostructured materials; semimagnetic semiconductors
资金
- German Research Foundation [SFB 689]
Anisotropic strain relaxation in (Ga,Mn)As nanostructures was studied combining time-resolved Kerr microscopy and ferromagnetic resonance techniques. Local resonance measurements on individual narrow stripes patterned along various crystallographic directions reveal that the easy axis of the magnetization can be forced perpendicular to the strain relaxation direction. Spatially resolved measurements on disk-shaped and rectangular (Ga,Mn)As structures allow us to directly visualize these local changes in the magnetic anisotropy. We show that the strain-induced edge anisotropy allows for an effective control of the coercive field in stripe structures.
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