期刊
PHYSICAL REVIEW B
卷 79, 期 2, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.024520
关键词
carrier density; ferroelectric semiconductors; ferroelectric transitions; indium; phonons; specific heat; superconducting transition temperature; tin compounds
资金
- DOE, Office of Basic Energy Sciences, [DE-AC02-76SF00515]
The ferroelectric degenerate semiconductor Sn(1-delta)Te exhibits superconductivity with critical temperatures, T(c), of up to 0.3 K for hole densities of order 10(21) cm(-3). When doped on the tin site with greater than x(c)=1.7(3)% indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific-heat data showing that a stronger pairing interaction is present for x>x(c) than for x < x(c). By examining the effect of In dopant atoms on both T(c) and the temperature of the ferroelectric structural phase transition, T(SPT), we show that phonon modes related to this transition are not responsible for this T(c) enhancement, and discuss a plausible candidate based on negative U pairing associated with mixed valency on the indium impurity sites.
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