期刊
PHYSICAL REVIEW B
卷 80, 期 11, 页码 -出版社
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.80.115325
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资金
- EPSRC [EP/G065586/1, EP/E023614/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/E023614/1, EP/G065586/1] Funding Source: researchfish
The density-dependent charge-carrier mobility in high-mobility organic field-effect transistors is investigated by simultaneous measurements of the channel potential and the transfer characteristics. By working under ultrahigh-vacuum conditions extrinsic effects due to H(2)O traces could be eliminated. The shape of the channel potential is inconsistent with a density-independent mobility. We find that the variable range hopping model as derived by Vissenberg and Matters for an exponential density of states [Phys. Rev. B 57, 12964 (1998)] consistently describes the data.
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