4.6 Article

Suppression of nuclear spin diffusion at a GaAs/AlxGa1-xAs interface measured with a single quantum-dot nanoprobe

期刊

PHYSICAL REVIEW B
卷 79, 期 8, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.081303

关键词

aluminium compounds; diffusion; gallium arsenide; III-V semiconductors; Overhauser effect; photoluminescence; semiconductor heterojunctions; semiconductor quantum dots; spin dynamics

资金

  1. EPSRC-GB [EP/C54563X/1, EP/C545648/1, GR/S76076, EP/G601642/1]
  2. Engineering and Physical Sciences Research Council [EP/C54563X/1, EP/C545648/1] Funding Source: researchfish

向作者/读者索取更多资源

Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlxGa1-xAs interface quantum dots by detecting the time dependence of the Overhauser shift in photoluminescence spectra. Long nuclear polarization decay times of approximate to 1 min have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin-diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据