4.6 Article

Hole spin quantum beats in bulk ZnO

期刊

PHYSICAL REVIEW B
卷 79, 期 4, 页码 -

出版社

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.79.045204

关键词

excited states; excitons; g-factor; ground states; II-VI semiconductors; photoluminescence; semiconductor epitaxial layers; time resolved spectra; zinc compounds

资金

  1. EADS Research foundation
  2. IUF
  3. AFCRST
  4. NSFC
  5. MSTC

向作者/读者索取更多资源

We report on experimental investigations of the hole spin coherence in ZnO by time-resolved optical orientation experiments in a magnetic field perpendicular to the growth direction. We observe periodic oscillations of the circular polarization of the donor-bound-exciton luminescence in both ZnO epilayer and nonintentionally doped bulk ZnO. The measurement of these quantum beats, which originate from the Larmor precession of hole spins, yields an accurate determination of the transverse Lande g factors of the hole in both the ground and excited states of the donor-bound-exciton complex.

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