Investigation of spin-orbit interaction in AlGaN/GaN heterostructures with large electron density

Magnetotransport phenomena in the high-density two-dimensional electron gas of AlGaN/GaN heterostrutures are investigated. Peculiarities of low- and high-field magnetotransport measurements in the temperature range from 0.3 to 10 K are discussed. The weak localization and antilocalization effects are observed and analyzed. The Rashba constant describing the spin-orbit interaction is extracted from the results of low-field magnetotransport for the structure with 33% aluminum content in the barrier and an electron sheet density of 1.1 x 10(13) cm(-2) and appears to be of 1.01 x 10(-10) eV cm.