Anomalous deep-level transients related to quantum well piezoelectric fields inInyGa1−yN∕GaN-heterostructure light-emitting diodes

标题
Anomalous deep-level transients related to quantum well piezoelectric fields inInyGa1−yN∕GaN-heterostructure light-emitting diodes
作者
关键词
-
出版物
PHYSICAL REVIEW B
Volume 77, Issue 4, Pages -
出版商
American Physical Society (APS)
发表日期
2008-01-12
DOI
10.1103/physrevb.77.045312

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