Article
Astronomy & Astrophysics
James Lyon, Roman Zwicky
Summary: CP violation has been established in the D-0 -> pi(+)pi(-)/K+K- system, with a central value of Delta A(CP)=-0.154(29) that is one order of magnitude higher than the naive Standard Model estimate. It remains uncertain whether this is due to currently incalculable strong interaction matrix elements or new physics. Interference of long-distance terms with the O-8 matrix element can lead to A(CP)(D -> V gamma)=few x 10(-3). The ratio of left- to right-handed photon polarization LD amplitudes is measurable in time-dependent CP asymmetries. Weak annihilation (WA) is argued to be the dominant LD contribution. More progress can be achieved by computing radiative corrections to WA or measuring specific charged particle modes.
Article
Physics, Applied
Justin C. Goodrich, Chee-Keong Tan, Damir Borovac, Nelson Tansu
Summary: Efficient p-type doping of III-nitride materials is challenging, but the use of dilute-anion III-nitride materials can significantly increase activation efficiency, reduce ionization energy, and enhance p-type conductivity compared to conventional nitrides.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Changming Ke, Yihao Hu, Shi Liu
Summary: Using first-principles calculations, we demonstrate the softening of unswitchable wurtzite III-V semiconductors at the nanoscale, resulting in ultrathin two-dimensional sheets with reversible polarization states. We identify a three-atomic-layer AlSb sheet that exhibits both ferroelectricity and antiferroelectricity, with tristate switching accompanied by a metal-semiconductor transition. Phonon spectrum calculations, ab initio molecular dynamics simulations, and variable-composition evolutionary structure search confirm the thermodynamic stability and potential synthesis of this triatomic layer. We propose a 2D AlSb-based homojunction field effect transistor that supports three distinct and nonvolatile resistance states, enabling nonvolatile multibit-based integrated nanoelectronics.
NANOSCALE HORIZONS
(2023)
Article
Chemistry, Multidisciplinary
Huandong Chen, Boyang Zhao, Josh Mutch, Gwan Yeong Jung, Guodong Ren, Sara Shabani, Eric Seewald, Shanyuan Niu, Jiangbin Wu, Nan Wang, Mythili Surendran, Shantanu Singh, Jiang Luo, Sanae Ohtomo, Gemma Goh, Bryan C. Chakoumakos, Simon J. Teat, Brent Melot, Han Wang, Abhay N. Pasupathy, Rohan Mishra, Jiun-Haw Chu, Jayakanth Ravichandran
Summary: In this study, the CDW order and phase transitions in a dilute d-band semiconductor, BaTiS3, were investigated using electrical transport, synchrotron X-ray diffraction, and density-functional theory calculations. The results suggest that both electron-phonon coupling and electron-electron interactions play important roles in the observed CDW order and phase transitions in BaTiS3. This research is important for understanding CDW phenomena in semiconductors and developing novel electronic devices.
ADVANCED MATERIALS
(2023)
Article
Physics, Applied
Philip C. Klipstein
Summary: In a photodiode made from a narrow bandgap III-V material such as InSb, the dominant dark current mechanism is thermal generation-recombination in the depletion region. XBn or XBp barrier detectors suppress the generation-recombination current by using a wide bandgap barrier material. Diffusion limited barrier detectors have a unity gain device architecture that is fundamentally different from traditional photodiodes. High performance barrier detector arrays for mid- and long-wave infrared detection have been developed using bulk alloy and type II superlattice (T2SL) absorbers.
APPLIED PHYSICS LETTERS
(2022)
Article
Physics, Applied
Mithun Bhowmick, Haowen Xi, Bruno Ullrich
Summary: This article introduces a model that accurately fits the absorption saturation parameter linked to the effective electron density of states, allowing for the comparison of experimentally found absorption limits and their variations in compound semiconductors with theoretical expectations. This is crucial for certain optoelectronic device applications.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Physical
Wei Yu, Zhaofu Zhang, Xuhao Wan, Hailing Guo, Qingzhong Gui, Yuan Peng, Yifei Li, Wenjie Fu, Dingyi Lu, Yuchen Ye, Yuzheng Guo
Summary: Density functional theory (DFT) is a powerful computational tool for electronic structure calculations of materials. DFT + U + V is an alternative approach that can overcome the limitations of accuracy and efficiency. In this study, we propose the use of Bayesian optimization with a dropout (BOD) algorithm to optimize the U and V terms, resulting in improved electronic properties for bulk materials at a lower computational cost. We also observe that U/V parameters are reasonably transferable between surface slabs and interfaces, allowing for accurate electronic property calculations of large-scale systems.
JOURNAL OF CHEMICAL THEORY AND COMPUTATION
(2023)
Article
Chemistry, Physical
Trupti K. Gajaria, Narayan N. Som, Shweta D. Dabhi, Prafulla K. Jha
Summary: This article introduces the study of III-V materials, focusing on the electronic dispersion and band alignment of heterostructure nanowires. The results show that these materials have potential applications in photocatalysis and photovoltaics, and exhibit good catalytic activity in the hydrogen evolution reaction. Additionally, the nano-scale nature of these systems offers cost-effective production advantages.
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
(2022)
Article
Materials Science, Multidisciplinary
K. Badiane, G. Rodary, M. Amato, A. Gloter, C. David, H. Aubin, J-C Girard
Summary: In this study, the p-d hybridization of transition metal impurities in a semiconductor host is investigated using scanning tunneling microscopy and spectroscopy. By combining spatial density of states mapping and in-gap state spectroscopy, the researchers provide insights into the spatial extension and electronic structure of the wave function of Cr impurities on GaAs(110), and show how the main resonance peaks and the "drop-eye" lobes of the wave function observed experimentally are direct evidence of p-d hybridization.
Article
Energy & Fuels
S. Catalan-Gomez, E. Martinez Castellano, M. Schwarz, M. Montes Bajo, L. Dorado Vargas, A. Gonzalo, A. Redondo-Cubero, A. Gallego Carro, A. Hierro, J. M. Ulloa
Summary: This study investigates the use of core-shell gallium nanoparticles as functional light scatterers on solar cells. By optimizing the nanoparticle size, the short-circuit current of the solar cells is significantly improved. The underlying physical mechanism is studied through optical measurements and simulations, and a method to reduce the plasmonic effect of the nanoparticles is demonstrated.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2024)
Review
Energy & Fuels
Jiaying Chen, Youtian Mo, Chaoying Guo, Jiansen Guo, Bingshe Xu, Xi Deng, Quan Xue, Guoqiang Li
Summary: The combination of III-V compound semiconductor materials and organic semiconductor materials is a potential pathway to solve the problems of conventional doped p-n junction solar cells. This review presents the recent progress of organic-inorganic hybrid solar cells based on polymers and III-V semiconductors, including materials, devices, growth processes, patterning and etching processes, advanced device structure designs, and optimization pathways for efficiency enhancement. The future development of such hybrid cells is also discussed.
Article
Chemistry, Multidisciplinary
Lan-Anh T. Nguyen, Krishna P. Dhakal, Yuhan Lee, Wooseon Choi, Tuan Dung Nguyen, Chengyun Hong, Dinh Hoa Luong, Young-Min Kim, Jeongyong Kim, Myeongwon Lee, Taeyoung Choi, Andreas J. Heinrich, Ji-Hee Kim, Donghun Lee, Dinh Loc Duong, Young Hee Lee
Summary: The study reveals an anomalous circularly polarized photoluminescence phenomenon in V-doped two-dimensional transition metal dichalcogenides, which is caused by the coupling of excitons with V-induced spin-polarized holes.
Article
Chemistry, Analytical
Pierre Fehlen, Guillaume Thomas, Fernando Gonzalez-Posada, Julien Guise, Francesco Rusconi, Laurent Cerutti, Thierry Taliercio, Denis Spitzer
Summary: Chemical warfare agents, such as sarin, are highly lethal to humans and require sensitive and selective detection. Infrared absorption spectroscopy is a powerful technique, but the mismatch between infrared light wavelength and molecule absorption cross-section dimensions reduces sensitivity. To address this, a plasmonic sensor using III-V semiconductors InAsSb with nano-antennas and enhanced electric field was proposed. Experiments using a sarin simulant showed that the sensor successfully detected the molecule at low concentrations. This work demonstrates the application of III-V semiconductor plasmonics for gas sensing of complex molecules using surface-enhanced infrared absorption.
SENSORS AND ACTUATORS B-CHEMICAL
(2023)
Review
Materials Science, Multidisciplinary
Peng Hu, Xuexia He, Hui Jiang
Summary: Organic semiconductors are attracting attention for their advantages such as low-temperature processing ability, low fabrication cost, and flexibility. Studying high charge carrier mobility organic semiconductors with a mobility higher than 10 cm(2) V-1 s(-1) is crucial for future commercial microelectronic applications. Progress in discovering novel organic molecules and improving device fabrication technology has led to some organic molecules breaking existing knowledge limitations and demonstrating very high mobilities.
Review
Nanoscience & Nanotechnology
Masoomeh Ghasemi, Egor D. Leshchenko, Jonas Johansson
Summary: The ability to grow defect-free nanowires in lattice-mismatched material systems and to design their properties has made them ideal candidates for applications in various fields such as nanophotonics, nanoelectronics, and medicine. Scientists have shifted their focus to more complex ternary nanowires, with composition control being key for bandgap engineering. Various combinations of compounds and growth methods have been used in numerous investigations.
Article
Nanoscience & Nanotechnology
M. J. Grzybowski, P. Wadley, K. W. Edmonds, R. P. Campion, K. Dybko, M. Majewicz, B. L. Gallagher, M. Sawicki, T. Dietl
Article
Materials Science, Multidisciplinary
Y. Satake, J. Shiogai, G. P. Mazur, S. Kimura, S. Awaji, K. Fujiwara, T. Nojima, K. Nomura, S. Souma, T. Sato, T. Dietl, A. Tsukazaki
PHYSICAL REVIEW MATERIALS
(2020)
Article
Physics, Applied
Ghulam Hussain, Giuseppe Cuono, Rajibul Islam, Artur Trajnerowicz, Carmine Autieri, Tomasz Dietl, Jaroslaw Jurenczyk
Summary: We investigated the electronic and optical properties of InAs/InAs0.625Sb0.375 superlattices, and found that they strongly depend on the lattice constant. We also observed the presence of two heavy-hole bands with increasing in-plane effective mass with respect to the Fermi level. We further found different distributions of electrons and holes in the superlattice.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Physics, Multidisciplinary
T. Dietl
Summary: This short paper provides an overview of the organizational milestones of the Institute of Physics, Polish Academy of Sciences (IF PAN), as well as the invited talks presented by physicists from IF PAN at the Jaszowiec meetings. Readers are referred to a recent essay by the present author for a more in-depth discussion and references to original papers.
ACTA PHYSICA POLONICA A
(2022)
Article
Physics, Multidisciplinary
Tomasz Dietl
Summary: Semiconductors are widely used in information communication and new energy technologies due to their sensitivity to electrostatic gating and doping. The presence of paramagnetic acceptor dopants quantitatively explains puzzling properties of two-dimensional topological semiconductors during the topological phase transition and in the regime of the quantum spin Hall effect, without any adjustable parameters. The phenomena of resonant states, charge correlation, Coulomb gap, exchange interaction, strong coupling limit, and bound magnetic polaron account for the short topological protection length, high hole mobilities compared with electron mobilities, and different temperature dependence of the spin Hall resistance in HgTe and (Hg,Mn)Te quantum wells.
PHYSICAL REVIEW LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Rajibul Islam, Sougata Mardanya, Alexander Lau, Giuseppe Cuono, Tay-Rong Chang, Bahadur Singh, Carlo M. Canali, Tomasz Dietl, Carmine Autieri
Summary: We study the interaction between magnetism and topology in three-dimensional HgTe/MnTe superlattices stacked along the (001) axis. Our results demonstrate the evolution of magnetic topological phases with respect to magnetic configurations. Different phases of magnetic topological insulators and semimetals are observed depending on the thickness and direction of MnTe layers. We also observe large anomalous Hall conductivity in the presence of ferromagnetism in the three-dimensional superlattice.
Article
Physics, Multidisciplinary
Rajibul Islam, Barun Ghosh, Giuseppe Cuono, Alexander Lau, Wojciech Brzezicki, Arun Bansil, Amit Agarwal, Bahadur Singh, Tomasz Dietl, Carmine Autieri
Summary: We investigate the evolution of topological phases as a function of hydrostatic pressure and uniaxial strain in two types of superlattices: HgTe/CdTe and HgTe/HgSe. In HgTe/CdTe superlattices, strain-induced three-dimensional flat bands at the Fermi level are found without requiring doping. In HgTe/HgSe superlattices, a rich phase diagram with various topological phases is observed, including an ideal Weyl semimetal and a small-gap topological insulator with multiple band inversions.
PHYSICAL REVIEW RESEARCH
(2022)
Meeting Abstract
Chemistry, Multidisciplinary
Tomasz Dietl
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES
(2021)
Article
Materials Science, Multidisciplinary
Cezary Sliwa, Carmine Autieri, Jacek A. Majewski, Tomasz Dietl
Summary: It has been suggested that the enlarged spin susceptibility in topological insulators contributes to the ferromagnetism of bismuth-antimony topological chalcogenides doped with transition metal impurities, while earlier studies of HgTe and related systems indicate antiferromagnetic coupling. Despite being in topological systems, the magnitude of interband contribution is small, and the sign of magnetism depends on the coordination and charge state of magnetic impurities rather than the topological class of the host material.
Article
Materials Science, Multidisciplinary
Alexander Kazakov, Wojciech Brzezicki, Timo Hyart, Bartlomiej Turowski, Jakub Polaczynski, Zbigniew Adamus, Marta Aleszkiewicz, Tomasz Wojciechowski, Jaroslaw Z. Domagala, Ondrej Caha, Andrei Varykhalov, Gunther Springholz, Tomasz Wojtowicz, Valentine V. Volobuev, Tomasz Dietl
Summary: The research investigates the saturation of coherence length in conductors, such as Dirac materials, at decreasing temperatures, attributing this phenomenon to external noise, residual magnetic impurities, or two-level systems specific to noncrystalline solids. Theoretical analysis and experimental studies on the SnTe-class compounds reveal the deteriorating effect of breaking mirror symmetry on Berry's phase quantization and weak-antilocalization magnetoresistance. The results suggest that spatial symmetries should also be considered in classifying quantum transport phenomena.
Article
Physics, Multidisciplinary
T. Dietl
Summary: This paper discusses the significant results obtained by researchers at the Institute of Physics, Polish Academy of Sciences related to topological matter and spintronics. Studying and controlling the properties of semiconductors through doping, lighting, and applying various fields have led to their abundance in various technological applications.
ACTA PHYSICA POLONICA A
(2021)
Article
Materials Science, Multidisciplinary
N. Pournaghavi, M. F. Islam, Rajibul Islam, Carmine Autieri, Tomasz Dietl, C. M. Canali
Summary: Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase and the axion insulator (AI) phase. Investigating a trilayer heterostructure composed of a Bi2Se3 (Bi2Te3) TI thin film sandwiched between two antiferromagnetic MnTe layers using first-principles density functional theory methods reveals the onset of these two topological phases. The study also discusses the possibility of inducing transitions between the CI and the AI phases through the spin-orbit torque caused by the spin Hall effect in an adjacent conducting layer.
Article
Materials Science, Multidisciplinary
Carmine Autieri, Cezary Sliwa, Rajibul Islam, Giuseppe Cuono, Tomasz Dietl
Summary: This study combines relativistic first-principles calculations, tight-binding approach, and magnetic circular dichroism theory to reveal that the physics of magnetic circular dichroism at the boundary of the Brillouin zone is strongly affected by two relativistic effects in particular compounds.
Article
Materials Science, Multidisciplinary
G. P. Mazur, K. Dybko, A. Szczerbakow, J. Z. Domagala, A. Kazakov, M. Zgirski, E. Lusakowska, S. Kret, J. Korczak, T. Story, M. Sawicki, T. Dietl
Article
Materials Science, Multidisciplinary
Ivan Yahniuk, Sergey S. Krishtopenko, Grzegorz Grabecki, Benoit Jouault, Christophe Consejo, Wilfried Desrat, Magdalena Majewicz, Alexander M. Kadykov, Kirill E. Spirin, Vladimir I. Gavrilenko, Nikolay N. Mikhailov, Sergey A. Dvoretsky, Dmytro B. But, Frederic Teppe, Jerzy Wrobel, Grzegorz Cywinski, Slawomir Kret, Tomasz Dietl, Wojciech Knap
NPJ QUANTUM MATERIALS
(2019)
