期刊
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
卷 13, 期 32, 页码 14370-14377出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c1cp21507h
关键词
-
资金
- Japan Science and Technology Agency [AS2111030D]
- Grants-in-Aid for Scientific Research [23350061] Funding Source: KAKEN
For a material for organic thin-film transistors, not only high mobility but also low threshold voltage and long-term stability are important requirements. In order to realize these properties, materials with relatively large oxidation potentials, namely weak donors, have been designed as p-channel organic semiconductors. Here we propose a different strategy; transistor properties of dibenzotetrathiafulvalene (DBTTF) are significantly improved by the introduction of tert-butyl groups. Although this chemical modification does not much change the ionization potential, small threshold voltage and stability over several months are attained together with the improved mobility, probably due to some kind of passivation effect of the bulky tert-butyl groups. In contrast, the systematic fluorine substitution rapidly diminishes the transistor performance. There are two kinds of herringbone structures with much different dihedral angles of about 501 and 1301, and the tert-butyl compound falls into the former category.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据