Nucleation and growth of atomic layer deposition of HfO2 gate dielectric layers on silicon oxide: a multiscale modelling investigation

标题
Nucleation and growth of atomic layer deposition of HfO2 gate dielectric layers on silicon oxide: a multiscale modelling investigation
作者
关键词
-
出版物
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 11, Issue 19, Pages 3701
出版商
Royal Society of Chemistry (RSC)
发表日期
2009-03-26
DOI
10.1039/b821502b

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