4.5 Article

Defect-band photoluminescence imaging on multi-crystalline silicon wafers

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出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.201206068

关键词

silicon; solar cells; photoluminescence imaging; defects

资金

  1. U.S. Department of Energy [DE-AC36-08GO28308]
  2. National Renewable Energy Laboratory
  3. American Recovery and Reinvestment Act

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Defect-band emission photoluminescence (PL) imaging with an indium-gallium-arsenide (InGaAs) camera was applied to multi-crystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from extend- ed defects were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

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