期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 5, 期 12, 页码 441-443出版社
WILEY-BLACKWELL
DOI: 10.1002/pssr.201105403
关键词
magnetic materials; EuO; X-ray photoemission spectra; spin injection; silicon
资金
- DFG [MU 3160/1-1]
- BMBF [813405-8 WW3, 05K10CHB]
We present an electronic structure study of a magnetic oxide/semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon-based spintronics devices. A combined electronic structure analysis of Eu core levels and valence bands using hard X-ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO spin filter tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintronics devices. [GRAPHICS] Hard X-ray photoemission spectroscopy of an Al/EuO/Si heterostructure probing the buried EuO and EuO/Si interface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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