期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 2, 期 3, 页码 135-137出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.200802059
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Cross-sectional samples of CuIn1-xGaxSe2 layers grown by a three-stage process were studied by means of electron backscatter diffraction (EBSD) in completed thin-film solar cells. The microstructural analysis reveals a dependence of the average grain size on the gallium content x = [Ga]/([Ga] + [In]), with a maximum at x = 0.23. This result is correlated with structural measurements on CuIn1-xGaxSe2 powder samples showing that the ratio of the lattice constants c/a is equal to 2 for about the same x value. The pseudocubic crystal structure at about x = 0.23 may lead to reduced strain in the growing CuIn1-xGaxSe2 layer and therefore larger average grain sizes. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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