期刊
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
卷 2, 期 6, 页码 275-277出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssr.200802203
关键词
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资金
- Ministry of Education, Science, Sports, and Culture of Japan [19360322]
- Grants-in-Aid for Scientific Research [19360322] Funding Source: KAKEN
We report on wet etching of photomodified regions in crystalline sapphire using KOH solution. Tightly focused femtosecond laser pulses (150 fs at 800 nm wavelength) were used to create void structures enclosed in an amorphised sapphire shell inside the bulk of a crystalline host. The diameter of the amorphous regions can be controlled by pulse energy and was typically 0.5-1.5 mu m. The etching rate depends on the distance between adjacent irradiation spots, pulse energy, concentration of etchant and ultrasonic agitation.
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