Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields

标题
Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
作者
关键词
-
出版物
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 250, Issue 12, Pages 2692-2696
出版商
Wiley
发表日期
2013-11-15
DOI
10.1002/pssb.201300295

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