期刊
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
卷 248, 期 8, 页码 1961-1966出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201046567
关键词
Ag; dilute magnetic semiconductors; doping; electronic structure; magnetic properties; SnO2
资金
- National Natural Science Foundation of China [11074069, 90606001, 50971058, 50602014]
- Hunan Provincial Education Department [10C0559]
- 973 National Key Basic Research Program of China [2007CB310502]
- Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
The electronic structures and magnetic properties of Ag-doped SnO2 have been investigated using first-principles spin-polarized calculations based on density functional theory. Our results demonstrate that Ag doping introduces spin polarization in SnO2 and gives rise to a local magnetic moment of 1.0 mu(B) per substitutional silver ion. The hole-mediated ferromagnetic (FM) coupling between two Ag ions in this material is possibly ascribed to a p d hopping interaction between O and Ag ions. The oxygen vacancy (V-O) plays an important role in determining the magnetic properties of the Ag-doped SnO2 system. It is found that the V-O does not induce magnetism in bulk SnO2. The V-O enhances stability of the spin-polarized state for the case of the single-Ag-doped system, and imposes an intricate effect on a pair of Ag-doped configurations. For example, the FM coupling between two Ag ions is possibly reinforced if V-O is sufficiently far away from them. The result indicates that Ag-doped SnO2 is a promising candidate for applications in future spintronic devices. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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