Electronic properties of Y-junctions in SnO2 nanowires

Growth conditions leading to kinking and branching in SnO2 nanowires have been investigated. Lower temperature growth at 750 degrees C leads to Y-junctions as seen previously in carbon nanotubes, whereas straight nanowires are obtained at 880 degrees C. Photoemission valence band spectroscopy is used to show that the carrier concentration and Fermi level position vary with diameter. Thus, the stem and branches in a Y-junction can have completely different semiconducting properties, leading to opportunities in novel device construction. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim