Electrical properties of InGaN grown by molecular beam epitaxy

标题
Electrical properties of InGaN grown by molecular beam epitaxy
作者
关键词
-
出版物
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 245, Issue 5, Pages 868-872
出版商
Wiley
发表日期
2008-04-11
DOI
10.1002/pssb.200778710

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