Negative electron affinity of diamond and its application to high voltage vacuum power switches

High-Voltage Vacuum Switch with a Diamond p–i–n Diode Using Negative Electron Affinity

(2012) Daisuke Takeuchi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Enhancement in emission efficiency of diamond deep-ultraviolet light emitting diode

(2011) Toshiharu Makino et al.   APPLIED PHYSICS LETTERS

Electron emission from CVD diamond p–i–n junctions with negative electron affinity during room temperature operation

(2011) D. Takeuchi et al.   DIAMOND AND RELATED MATERIALS

Electron emission from diamond p-i-n junction diode with heavily P-doped n+ top layer

(2011) D. Takeuchi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Electron Emission from a Diamond (111) p–i–n+Junction Diode with Negative Electron Affinity during Room Temperature Operation

(2010) Daisuke Takeuchi et al.   Applied Physics Express

Electron emission by current injection from n-type diamond film surface with negative electron affinity

(2010) D. Takeuchi et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Selective Growth of Buried n+Diamond on (001) Phosphorus-Doped n-Type Diamond Film

(2009) Hiromitsu Kato et al.   Applied Physics Express

High performance of diamond p+-i-n+ junction diode fabricated using heavily doped p+ and n+ layers

(2009) Kazuihiro Oyama et al.   APPLIED PHYSICS LETTERS

Electrical and light-emitting properties from (111)-oriented homoepitaxial diamond p–i–n junctions

(2009) Toshiharu Makino et al.   DIAMOND AND RELATED MATERIALS

Low specific contact resistance of heavily phosphorus-doped diamond film

(2008) Hiromitsu Kato et al.   APPLIED PHYSICS LETTERS

Electron emission suppression from hydrogen-terminated n-type diamond

(2008) D. Takeuchi et al.   DIAMOND AND RELATED MATERIALS

Electrical and light-emitting properties of homoepitaxial diamond p-i-n junction

(2008) Toshiharu Makino et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE