Structural, surface morphological, and optical properties of nanocrystalline Cu2O and CuO films formed by RF magnetron sputtering: Oxygen partial pressure effect

Copper oxide films were deposited on glass and silicon substrates held at 473?K by radio-frequency (RF) magnetron sputtering of copper target under different oxygen partial pressure in the range 5 x 10(-38) x 10(-2)?Pa. The influence of oxygen partial pressure on the compositional, chemical binding configuration, structural, morphological, electrical, and optical properties of the deposited films was investigated. The films grown at low oxygen partial pressures?