Article
Nanoscience & Nanotechnology
Joel Davidsson, Rohit Babar, Danial Shafizadeh, Ivan G. Ivanov, Viktor Ivady, Rickard Armiento, Igor A. Abrikosov
Summary: In this study, a defect database generated by automatic defect analysis and qualification (ADAQ) workflows is used to identify and analyze defects in 4H-SiC that contribute to previously unidentified magneto-optical signals. A carbon anti-site structure near the silicon vacancy is identified as the cause of these signals, and its energetic boundness is determined. Computational and experimental results show good agreement, demonstrating the effectiveness of using a high-throughput database for defect search in quantum applications.
Article
Engineering, Electrical & Electronic
Yun Liu, Tao Wei, Minghao Li, Zhan Li, Zhongying Xue, Xing Wei
Summary: This study developed a vapor gas etching method to characterize grown-in defects in boron-doped CZ silicon wafers, identifying unique morphologies for different defect types. By analyzing data obtained from various microscopy techniques, it was found that defect types could be differentiated by light scattering signal and defect regions could be divided by etch pit density, providing a fast and comprehensive defect delineation method for the Si industry.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Physical
Yuri N. Palyanov, Yuri M. Borzdov, Alexander F. Khokhryakov, Igor N. Kupriyanov
Summary: Experimental studies showed that the addition of europium compounds to Mg-based systems had an inhibitory effect on diamond crystallization process, resulting in a decrease in the degree of graphite conversion to diamond, a decrease in the diamond growth rate, and the appearance of metastable graphite.
Article
Chemistry, Multidisciplinary
Jie Qin, Yilong Jiang, Shehui Dang, Linmao Qian, Lei Chen, Yang Wang
Summary: In this study, the temperature dependence of silicon amorphization behaviors and their mechanisms were fully revealed through reactive molecular dynamics simulations. It was found that the degree of amorphization is suppressed as the temperature increases, contrary to initial expectations. Analytical models were proposed to describe both the amorphization and recrystallization processes. Overall, these findings provide deep insights into the temperature-dependent amorphization and recrystallization processes of silicon, benefiting the further development of silicon-based devices and technologies.
Article
Physics, Applied
Y. Shimada, Y. Ikeda, K. Yoshida, M. Sato, J. Chen, Y. Du, K. Inoue, R. Maass, Y. Nagai, T. J. Konno
Summary: The experimental conditions inside a transmission electron microscope (TEM), such as ultra-high vacuum and high-energy electron irradiation, can cause unexpected microstructural changes during in situ thermal-annealing experiments. This paper reports on the microstructural changes of a Fe-15%Si alloy during in situ TEM annealing and observes the precipitation of alpha-Fe both at the sample surface and inside the sample. Vacancies on Si sites induced by high-energy electron irradiation and enhanced thermal diffusion of Fe atoms contribute to this unexpected microstructural evolution.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Energy & Fuels
Shanjing Liu, Xinyu Xu, Chuwu Xing, Guanming Ge, Duofa Wang, Tianjin Zhang
Summary: By introducing lead acetate and forming Pb(Ac)(2) x DMSO x PbI2 complex, the crystallization process of CsPbI2Br perovskite is regulated and the iodine vacancy defects and grain boundary defects are passivated, resulting in improved solar cell performance.
Article
Crystallography
Shanshan Tang, Xiaofang Qi, Chuanbo Chang, Quanzhi Wang, Lijun Liu
Summary: A new functional grain boundary group (FGBG) technology was used to produce quasi-single crystalline silicon ingots with a high single crystalline area ratio. The technology effectively suppressed the intrusion of side polycrystalline grains and blocked the dislocations generated by polycrystalline grains near the grain boundary.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Physics, Applied
I. Capan, T. Brodar, R. Bernat, Z. Pastuovic, T. Makino, T. Ohshima, J. D. Gouveia, J. Coutinho
Summary: The research focuses on a bistable defect known as the M-center, introduced in n-type 4H-SiC by 2 MeV He ion implantation. It investigates the deep levels of the M-center using junction spectroscopy techniques, revealing a fourth transition labeled as M-4. Activation energies and apparent capture cross sections for all four metastable defects are determined, providing insights into their properties.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Hiroki Nakane, Masashi Kato, Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, Nguyen Tien Son
Summary: The study used PICTS and EPR to investigate irradiation-induced defects in HPSI 4H-SiC, identifying deep levels and suggesting their correlation with charge transition levels of the C antisite-vacancy pair. The activation energy previously attributed to be 1.1 eV in commercial HPSI 4H-SiC materials is reassigned to be related to the single donor level of CSiVC.
JOURNAL OF APPLIED PHYSICS
(2021)
Article
Physics, Applied
Rita Maji, Eleonora Luppi, Elena Degoli
Summary: The interfacial structure of a silicon grain boundary (Si-GB) has a significant impact on its chemical functionalization and various physical-chemical properties of the material. This study provides an atomistic understanding of the role of the GB interface and its importance in high performance technological applications. The influence of different sigma 3{1121 Si-GB models on the structural reconstruction and properties of the GB interface has been investigated, along with the impact of vacancies and light impurities. The behavior of (1 x 1) and (1 x 2) models is significantly different under the influence of vacancies and the segregation of impurities.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Chemistry, Physical
Tihomir Knezevic, Eva Jelavic, Yuichi Yamazaki, Takeshi Ohshima, Takahiro Makino, Ivana Capan
Summary: In this study, boron-related defects in low-doped n-type 4H-SiC semitransparent Schottky barrier diodes (SBDs) were investigated using minority carrier transient spectroscopy (MCTS). Boron, introduced during chemical vapor deposition (CVD) crystal growth, led to the presence of shallow (B) and deep boron (D-center) defects, with concentrations as high as 1 x 10(15) cm(-3). Despite the higher concentration of boron compared to nitrogen doping, the steady-state electrical characteristics of the n-type 4H-SiC SBDs remained unaffected.
Article
Chemistry, Multidisciplinary
Avital Wagner, Vladimir Ezersky, Raquel Maria, Alexander Upcher, Tali Lemcoff, Eliahu D. Aflalo, Yael Lubin, Benjamin A. Palmer
Summary: By studying guanine crystal formation in spiders, it is revealed that guanine crystallization is a non-classical, multistep process involving nucleation of ordered nanogranules, growth through attachment of nanogranules into platelets, and relaxation of structural defects to form single crystals. The findings provide insights on how organisms control the morphology and optical properties of molecular crystals.
ADVANCED MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Peng Zhai, Lixia Ren, Shuqin Li, Lu Zhang, Deng Li, Shengzhong (Frank) Liu
Summary: By utilizing a light modulation strategy, perovskite materials can be prepared in a non-toxic water solvent, offering a feasible avenue for authentic green synthesis. The water-processed perovskite exhibits high efficiency and environmental stability.
Article
Materials Science, Ceramics
Yu-Rim Jeon, Kyongtae Ryu, Hee-Lak Lee, Seung Jae Moon
Summary: This study applied electric-field-enhanced aluminum-induced crystallization (AIC) to crystallize amorphous silicon and attempted to improve the crystallization using a stepwise current method. The experimental results showed that the stepwise current increased the crystallization time and improved the crystallinity of the produced polycrystalline silicon.
JOURNAL OF NON-CRYSTALLINE SOLIDS
(2023)
Article
Chemistry, Physical
Chen Yang, Jun Yin, Hong Li, Khulud Almasabi, Luis Gutierrez-Arzaluz, Issam Gereige, Jean-Luc Bredas, Osman M. Bakr, Omar F. Mohammed
Summary: We synthesized two types of MAPbI3 single-crystal films with different surface orientations, and studied their performance in solar cells. The results showed that both MAPbI3(001) and (100) single-crystal films have efficient hole transfer, but differ in electron transfer and stability.
ACS ENERGY LETTERS
(2022)
Article
Physics, Applied
M. G. Tsoutsouva, P. E. Vullum, K. Adamczyk, M. Di Sabatino, G. Stokkan
JOURNAL OF APPLIED PHYSICS
(2020)
Article
Crystallography
Rania Hendawi, Arjan Ciftja, Gaute Stokkan, Lars Arnberg, Marisa Di Sabatino
JOURNAL OF CRYSTAL GROWTH
(2020)
Article
Biochemical Research Methods
Jochen Busam, Gaute Stokkan, Astrid Marie F. Muggerud, Marisa Di Sabatino
Summary: Direct current glow discharge mass spectrometry with an indium-based secondary cathode technique is utilized to analyze metallic impurities in solid, nonconducting, fused high-purity quartz relevant to the solar industry. The study optimizes secondary cathode design and glow discharge conditions beyond standard practices, establishing relative sensitivity factors for the optimized conditions. The results demonstrate stable measurements with detection limits down to the part per billion range.
JOURNAL OF MASS SPECTROMETRY
(2021)
Article
Engineering, Electrical & Electronic
Pierpaolo Vecchi, Giovanni Armaroli, Marisa Di Sabatino, Daniela Cavalcoli
Summary: The study aims to investigate the electrical activity of metallic contaminated grain boundaries in mc-Si. It was found that iron precipitates enhance the current contrast at the grain boundaries. Two sets of mc-Si wafers contaminated with iron and aluminium were analyzed using Electron Backscatter Diffraction and Conductive Atomic Force Microscopy, contributing to an improved understanding of iron precipitates at grain boundaries in mc-Si.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Energy & Fuels
Rania Hendawi, Arjan Ciftja, Lars Arnberg, Marisa Di Sabatino
Summary: Safe implementation of reusable crucibles in the silicon PV industry requires a thorough understanding of reactions to avoid liquid infiltration and crucible failure. By adding colloidal silica to silicon nitride coating, the oxygen concentration can be controlled, crucible degradation can be avoided, and the pre-oxidation step can be eliminated. An analytical model was used to quantify the effect of oxygen content in the coating on the depletion rate, providing insight into hindering liquid infiltration by forming and stabilizing silicon oxynitride in the coating.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2021)
Article
Spectroscopy
Gagan Paudel, Geir Langelandsvik, Sergey Khromov, Siri Marthe Arbo, Ida Westermann, Hans Jorgen Roven, Marisa Di Sabatino
Summary: In this study, the diffusion of traces of chromium and nickel at the interface of a steel-aluminum bilayer was profiled using a new sensitive dc-GDMS instrument. The results showed enrichment of both elements at the interface, with higher concentrations for the heat-treated specimen.
ATOMIC SPECTROSCOPY
(2022)
Article
Chemistry, Analytical
Jochen Busam, Gagan Paudel, Marisa Di Sabatino
Summary: The capabilities of indium and silicon as secondary cathodes for direct current glow discharge mass spectrometry (dc-GDMS) were compared, demonstrating that silicon is a good alternative material.
JOURNAL OF ANALYTICAL ATOMIC SPECTROMETRY
(2022)
Article
Energy & Fuels
Rania Hendawi, Lars Arnberg, Marisa Di Sabatino
Summary: This study focuses on the interactions between the gas atmosphere, liquid silicon, Si3N4 coating, and graphite. Experimental results show that carbon monoxide inhibits the infiltration and spreading of silicon droplets during wetting, while nitrogen promotes silicon wetting and accelerates the decomposition rate of silicon content in the coating.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2022)
Article
Energy & Fuels
Rania Hendawi, Lars Arnberg, Marisa Di Sabatino
Summary: The research on coatings for graphite materials reveals that using a two-layer coating technique can improve non-wetting behavior, decrease coating degradation rate, and reduce CO evolution during isothermal holding, achieving minimal detrimental interaction between graphite and silicon oxides.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2022)
Article
Energy & Fuels
G. Gaspar, C. Modanese, S. Bernardis, N. Enjalbert, L. Arnberg, S. Dubois, M. Di Sabatino
Summary: This study aims to investigate the influence of copper contamination on highly doped and compensated silicon materials. Experimental results show that copper atoms migrate to the surface and decrease the bulk copper content in n-type compensated wafers, while no accumulation of copper atoms is observed at the surface of p-type compensated material. However, the hole carrier mobility is affected in the presence of copper contamination.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2022)
Article
Materials Science, Multidisciplinary
Vladyslav Matkivskyi, Arne Karstein Royset, Gaute Stokkan, Pal Tetlie, Marisa Di Sabatino, Gabriella Tranell
Summary: This study demonstrated the combined use of white light interferometry (WLI) and Laue X-ray crystallography scanner characterisation to investigate the chemical etching response of diamond cut multi-crystalline Si (mc-Si) wafers. The topography of mc-Si surfaces before and after etching was examined to evaluate the effect of different texturing additives. The results illustrated the influence of different crystal orientations on the etching rate, with the etching speed increasing with the crystallographic similarity to the main (hkl) planes (100,110,111). The comparison of isopropyl alcohol (IPA) and sodium hypochlorite (NaOCl) additives showed NaOCl to be favorable for polishing mc-Si wafers, while IPA can only be used for crystal grains close to the (111) orientation.
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
A. V. Bugten, L. Michels, R. B. Brurok, C. Hartung, E. Ott, L. Vines, Y. Li, L. Arnberg, M. Di Sabatino
Summary: The effects of boron at various concentrations on low copper spheroidal graphite iron (SGI) were investigated. It was found that boron had no noticeable effect on the size distributions, number densities, or morphologies of microparticle populations, as well as the size distributions or number densities of graphite nodules at concentrations of 130 to 140 ppm. However, even at concentrations as low as 24 ppm, boron was observed to cause rough surface morphology of graphite nodules.
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE
(2023)
Article
Multidisciplinary Sciences
Vladyslav Matkivskyi, Arne Karstein Royset, Gaute Stokkan, Pal Tetlie, Marisa Di Sabatino, Gabriella Tranell
Summary: This study aims to develop a combined surface morphology and crystallographic analysis method for crystalline silicon. By applying various chemical operations to multi-crystalline silicon samples and analyzing them using WLI and Laue techniques, maps for crystal orientation to etching rate dependency were created. The study demonstrates the strengths of this combinatory technique as an alternative to existing methods such as AFM and EBSD.
Proceedings Paper
Energy & Fuels
Mohammed M'Hamdi, Alexandra Sheppard, Jochen Thilo Busam, Gaute Stokkan, Marisa Di Sabatino
Summary: This study investigates the distribution of iron contamination in the process of silicon ingot preparation and develops a numerical model for prediction and evaluation. The results show that mixing conditions in the melt and diffusion from the crucible and coating play important roles in iron contamination. Furthermore, introducing a diffusion barrier layer may help reduce iron contamination.
11TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2021)
(2022)
Proceedings Paper
Energy & Fuels
Hendawi Rania, Rune Sondena, Arjan Ciftja, Gaute Stokkan, Lars Arnberg, Marisa Di Sabatino
Summary: In this work, high-performance multi-crystalline silicon (HPMC-Si) ingots were made in silicon nitride crucibles. The study found that increasing argon flow during the directional solidification process can reduce carbon levels. Preliminary lifetime measurements showed that gettering and hydrogenation can greatly improve the minority carrier lifetime. The results suggest that further improvements can be achieved by adjusting the solidification parameters.
11TH INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2021)
(2022)