期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 207, 期 8, 页码 1993-1996出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.201026053
关键词
light-emitting diodes; InGaN; ZnO; transparent conducting oxides; electroluminescence; degradation
资金
- National Science Foundation
- DOE through University of Wisconsin [DE-FG-02-08ER46547]
We report on the electrical and optical properties of InGaN based light emitting diodes (LEDs) utilizing Ga doped ZnO (GZO) grown by molecular beam epitaxy (MBE) as a highly transparent contact p-electrode (GZO-LEDs). For comparison, the LEDs with semi-transparent thin Ni/Au (5/5 nm) current spreading layers were also fabricated on the same wafer (Ni/Au-LEDs). Unpackaged GZO-LEDs with 200 mu m diameter showed negligible light output degradation for up to 30 min under CW current of 100 mA (corresponding to a 318 A/cm(2) current density), while the light output for Ni/Au-LEDs was reduced by 85% after only 5 min of operation due to the severe current crowding effect (or current filamentation). Pulsed electroluminescence (EL) measurements revealed that the GZO-LEDs exhibit 50% higher EL intensity for the same current levels. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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