4.4 Article Proceedings Paper

New developments in green LEDs

期刊

出版社

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200880926

关键词

-

向作者/读者索取更多资源

Green InGaN LEDs showed great improvements over the last decade, but still perform not as good as blue InGaN LEDs. Brightness, Efficiency and sub-linearity of brightness versus driving current (droop) are significantly lower for a 530 nm green LED than for a 440 nm blue LED. Assuming an indirect Auger effect as one of the major loss mechanisms in InGaN LEDs, a reduction of the carrier density per emitting well is the key for efficiency improvement for green LEDs. An optimized multiple quantum well (MQW) structure with multiple emitting wells at 525 nm is compared to a single quantum well LED structure. A color-coding scheme was used to investigate MQW operation: up to four MQWs contribute to the green emission at 525 nm. Packaged 1 x 1 mm(2) ThinGaN (R) chips emit up to 109 lm (209 mW) at 350 mA and 170 lm (339 rnW) at 700 mA, the efficacy was 90 lm/W and 66 lm/W, respectively. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据