p-type diamond Schottky diodes fabricated by vacuum ultraviolet light/ozone surface oxidation: Comparison with diodes based on wet-chemical oxidation

We investigated the performance of Schottky diodes fabricated on diamond surface oxidized by two different techniques. A detailed comparison shows vacuum ultraviolet (VUV) light technique has better performance than the standard wet chemical technique: ideality factor and Schottky barrier height are more reproducible and leakage current is lower, suggesting VUV light oxidation method improves the controllability and the homogeneity of the surface electronic properties. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim