期刊
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
卷 205, 期 9, 页码 2190-2194出版社
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.200879711
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资金
- Miljostrategisk forskning (MISTRA) and Angpanneforeningens forskningsstiftelse
Hall-effect measurements on single crystal boron-doped CVD diamond in the temperature interval 80-450 K are presented together with SIMS measurements of the dopant concentration. Capacitance-voltage measurements on rectifying Schottky junctions manufactured on the boron-doped structures are also presented in this context. Evaluation of the compensating donor (N-D) and acceptor concentrations (N-A) show that in certain samples very low compensation ratios (N-D/N-A below 10(-4)) have been achieved. The influence of compensating donors on majority carrier transport and the significance for diamond device performance are briefly discussed. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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